I.L. Dias, A. R. Terto, P. C. Silva Neto, D. A. Ramirez, E. Tentardini
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引用次数: 1
Abstract
ABSTRACT Zirconium silicon nitride thin films with 1.6% Si addition were deposited via reactive magnetron sputtering and characterized by RBS, SEM-FEG, GAXRD, XPS and high temperature oxidation tests, aiming to investigate how silicon is structurally inserted in Zirconium nitride (ZrN) matrix. GAXRD results show a reduction in lattice parameter and grain size due to Si incorporation and XPS analyses demonstrate Si is present only in nitride form. Such observations proved the non-formation of substitutional or interstitial solid solution in ZrN, but the presence of Si3N4, even in low Si concentrations.
期刊介绍：
Surface Engineering provides a forum for the publication of refereed material on both the theory and practice of this important enabling technology, embracing science, technology and engineering. Coverage includes design, surface modification technologies and process control, and the characterisation and properties of the final system or component, including quality control and non-destructive examination.
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