A model of changing of charge carriers mobility value in an implanted-junction rectifier under influence of mismatch-induced stress

Abstract

PurposeThe purpose of this paper is (1) to analyze the dependence of charge carriers mobility in an implanted-junction heterorectifier on mismatch-induced stress and (2) to elaborate an analytical approach for analysis of mass transfer with the possibility to take into account changing of parameters of mass transport in space and time at one time as well as nonlinearity of the considered transfer.Design/methodology/approachIn this paper, the author analyzed charge carriers mobility changing in an implanted-junction heterorectifier under the influence of mismatch-induced stress. The author introduced a model to describe the considered changing of carriers mobility. Based on the analysis of the model, the author formulated conditions (1) to decrease and to increase of the mobility under influence of the stress; and (2) the author analyzed the possibility to control of mismatch-induced stress by radiation processing of materials of the considered multilayer structure. The author also introduced an analytical approach for analysis of mass transfer. The approach gives a possibility to take into account changing of parameters of mass transport in space and time at one time as well as nonlinearity of the considered transfer.FindingsFindings dependence of charge carriers mobility in an implanted-junction heterorectifier on mismatch-induced stress. Also the author finds an analytical approach for analysis of mass transfer. The approach gives a possibility to take into account changing of parameters of mass transport in space and time at one time as well as nonlinearity of the considered transfer.Originality/valueAll results of this paper are original.