Preparation and Characterization of Printed LTCC Substrates for Microwave Devices

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2019-04-01 DOI:10.1155/2019/6473587
Yanfeng Shi, Yongqiang Chai, Shengbo Hu
{"title":"Preparation and Characterization of Printed LTCC Substrates for Microwave Devices","authors":"Yanfeng Shi, Yongqiang Chai, Shengbo Hu","doi":"10.1155/2019/6473587","DOIUrl":null,"url":null,"abstract":"A novel LTCC substrate manufacturing process based on 3D printing was investigated in this paper. Borosilicate glass-alumina substrates with controlled size and thickness were successfully manufactured using a self-developed dual-nozzle hybrid printing system. The printing parameters were carefully analyzed. The mechanical and dielectric properties of the printed substrate were examined. The results show that the printed substrates obtain smooth surface (Ra=0.92 μm), compact microstructure (relative density 93.7%), proper bending strength (156 mPa), and low dielectric constant and loss (Ɛr=6.2, 1/tan⁡δ=0.0055, at 3 GHz). All of those qualify the printed glass–ceramic substrates to be used as potential LTCC substrates in the microwave applications. The proposed method could simplify the traditional LTCC technology.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"1 1","pages":""},"PeriodicalIF":1.3000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/6473587","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2019/6473587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 2

Abstract

A novel LTCC substrate manufacturing process based on 3D printing was investigated in this paper. Borosilicate glass-alumina substrates with controlled size and thickness were successfully manufactured using a self-developed dual-nozzle hybrid printing system. The printing parameters were carefully analyzed. The mechanical and dielectric properties of the printed substrate were examined. The results show that the printed substrates obtain smooth surface (Ra=0.92 μm), compact microstructure (relative density 93.7%), proper bending strength (156 mPa), and low dielectric constant and loss (Ɛr=6.2, 1/tan⁡δ=0.0055, at 3 GHz). All of those qualify the printed glass–ceramic substrates to be used as potential LTCC substrates in the microwave applications. The proposed method could simplify the traditional LTCC technology.
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微波器件用印刷LTCC基板的制备与表征
研究了一种基于3D打印的LTCC基板制造新工艺。采用自主研发的双喷嘴混合印刷系统,成功制备了尺寸和厚度可控的硼硅玻璃-氧化铝基板。仔细分析了印刷参数。测试了印刷基板的力学性能和介电性能。结果表明,该材料表面光滑(Ra=0.92 μm),结构紧凑(相对密度93.7%),抗弯强度(156 mPa)合适,介电常数和损耗低(Ɛr=6.2, 1/tan δ=0.0055,在3 GHz下)。所有这些都使印刷玻璃陶瓷基板成为微波应用中潜在的LTCC基板。该方法可以简化传统的LTCC技术。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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