Polymeric sidewall transfer lithography

IF 1.1 Q3 PHYSICS, MULTIDISCIPLINARY Journal of Physics Communications Pub Date : 2022-09-01 DOI:10.1088/2399-6528/ac8f18
Yi-Chen Lo, Xing Cheng
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Abstract

This work is to demonstrate a low cost and time-conserving technique to create nano-trenches by transferring nano-scale polymeric sidewalls into substrate. The polymeric sidewall is a vertically spreading layer deposited by spin-coating a polymer solution on a vertical template. By varying processing parameters such as the solution concentration or the spin-coating speed, the dimension of the sidewall can be changed, which, after pattern transfer, also changes the nano-trench dimension. In this work, high-resolution trenches of about 15 nm have been achieved after transferring straight line sidewalls into substrate. Other than straight line sidewall patterns, this method also fabricates ring-shaped patterns including circles, squares, and concentric squares. With various shapes of sidewall patterns, this technique has a potential to implement other practical applications such as fabricating high-resolution nanoimprint molds of 15 nm.
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聚合物侧壁转移光刻
这项工作是为了展示一种低成本和节省时间的技术,通过将纳米级聚合物侧壁转移到衬底上来创建纳米沟槽。聚合物侧壁是通过在垂直模板上旋转涂覆聚合物溶液而沉积的垂直扩散层。通过改变溶液浓度或旋转涂布速度等工艺参数,可以改变侧壁的尺寸,从而改变图案转移后的纳米沟槽尺寸。在这项工作中,在将直线侧壁转移到衬底后,获得了约15 nm的高分辨率沟槽。除了直线侧壁图案外,这种方法还可以制作圆环形状的图案,包括圆形、正方形和同心圆正方形。由于具有各种形状的侧壁图案,该技术具有实现其他实际应用的潜力,例如制造15纳米的高分辨率纳米压印模具。
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来源期刊
Journal of Physics Communications
Journal of Physics Communications PHYSICS, MULTIDISCIPLINARY-
CiteScore
2.60
自引率
0.00%
发文量
114
审稿时长
10 weeks
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