{"title":"A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics","authors":"E. Ryndin, A. Al-Saman, B. Konoplev","doi":"10.1155/2019/5135637","DOIUrl":null,"url":null,"abstract":"A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/5135637","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2019/5135637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 3
Abstract
A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.
期刊介绍：
Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
