An analytical switching model of SiC MOSFET considering the junction temperature characteristics

Digital Twin Pub Date : 2022-12-16 DOI:10.12688/digitaltwin.17774.1

Yaqiang Wang, Qunfang Wu, Qin Wang, Lan Xiao, Junlin Zhu, Boyuan Xu, Zhifeng Sun

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Abstract

In order to provide convenience in the design work as the manufacturer-supplied models of silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) are generally only applicable to specific software, an analytical switching model of SiC MOSFET considering the junction temperature characteristics based on MATLAB is proposed in this article. The junction temperature characteristics of the parameters required for the switching process, including threshold voltage, on-resistance and transfer characteristics of SiC MOSFET, threshold voltage and output characteristics of body diode, which are extracted from the datasheet of the SiC MOSFET provided by the manufacturer. Then a model for the transient process of the test circuit, including the non-linear capacitance, the parasitic resistance and parasitic inductance from package and the printed circuit board is created. After that, each sub-stage of the switching process is analyzed in detail, then the analytical model is solved numerically using MATLAB. Finally, the SiC MOSFET C3M0075120K manufactured by Wolfspeed is selected as the case study to verify the built model, and the accuracy is validated by comparing with the LTspice simulation and experiment results. As a result, the proposed model can be applied, especially in designs involving junction temperatures.

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考虑结温特性的SiC MOSFET解析开关模型

由于碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）的制造商提供的模型通常只适用于特定的软件，为了在设计工作中提供方便，本文提出了一种基于MATLAB的考虑结温特性的SiC MOSFET开关分析模型。开关过程所需参数的结温特性，包括SiC MOSFET的阈值电压、导通电阻和传输特性，体二极管的阈值电压和输出特性，这些特性都是从制造商提供的SiC MOSFET数据表中提取的。然后建立了测试电路的瞬态过程模型，包括封装和印刷电路板的非线性电容、寄生电阻和寄生电感。然后，对切换过程的每个子阶段进行了详细的分析，然后使用MATLAB对分析模型进行了数值求解。最后，以Wolfspeed公司生产的SiC-MOSFET C3M0075120K为例对所建立的模型进行了验证，并与LTspice仿真和实验结果进行了比较，验证了模型的准确性。因此，所提出的模型可以应用，特别是在涉及结温度的设计中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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