A Dense, Pinholes-free Pure Cubic Phase CsPbBr3 Nanocrystals Film for High-performance Photodetector

IF 2.1 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2023-06-30 DOI:10.1007/s13391-023-00448-x
Thanh-Tung Duong, Phuong-Nam Tran, Tuan-Pham Van, Duy-Hung Nguyen, Van-Dang Tran
{"title":"A Dense, Pinholes-free Pure Cubic Phase CsPbBr3 Nanocrystals Film for High-performance Photodetector","authors":"Thanh-Tung Duong,&nbsp;Phuong-Nam Tran,&nbsp;Tuan-Pham Van,&nbsp;Duy-Hung Nguyen,&nbsp;Van-Dang Tran","doi":"10.1007/s13391-023-00448-x","DOIUrl":null,"url":null,"abstract":"<p>This study demonstrates a simple centrifugal coating method to prepare high-quality pure cubic phase CsPbBr<sub>3</sub> nanocrystal film. The resultant perovskite layers possess a uniform and dense 500 nm-thick, with a bandgap of 2.38 eV, a low trap-state density of 6.9 × 10<sup>− 15</sup> cm<sup>− 3</sup>, and carrier mobility of approximately 19.8 cm<sup>2</sup>V<sup>− 1</sup>s<sup>− 1</sup>. Furthermore, CsPbBr<sub>3</sub> NCs-based self-powered photodetectors with high charge carriers’ charge transfer are fabricated. The device shows a low dark current density of 1.93 × 10<sup>− 7</sup> A/cm<sup>2</sup> at room temperature. Such photodetectors show the highest responsivity of 3.0 AW<sup>− 1</sup>, specific detectivity of 1.2 × 10<sup>13</sup> Jones, and external quantum efficiency (EQE) of 920% at zero bias voltage. The proposed method shows significant promise for use in the lab fabrication of optoelectronic devices based on thin films of nanocrystal perovskite materials.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"217 - 223"},"PeriodicalIF":2.1000,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00448-x","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

This study demonstrates a simple centrifugal coating method to prepare high-quality pure cubic phase CsPbBr3 nanocrystal film. The resultant perovskite layers possess a uniform and dense 500 nm-thick, with a bandgap of 2.38 eV, a low trap-state density of 6.9 × 10− 15 cm− 3, and carrier mobility of approximately 19.8 cm2V− 1s− 1. Furthermore, CsPbBr3 NCs-based self-powered photodetectors with high charge carriers’ charge transfer are fabricated. The device shows a low dark current density of 1.93 × 10− 7 A/cm2 at room temperature. Such photodetectors show the highest responsivity of 3.0 AW− 1, specific detectivity of 1.2 × 1013 Jones, and external quantum efficiency (EQE) of 920% at zero bias voltage. The proposed method shows significant promise for use in the lab fabrication of optoelectronic devices based on thin films of nanocrystal perovskite materials.

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用于高性能光电探测器的致密无针孔纯立方相CsPbBr3纳米晶体薄膜
本研究展示了一种制备高质量纯立方相 CsPbBr3 纳米晶薄膜的简单离心镀膜方法。所制备的包晶层厚度为 500 nm,均匀致密,带隙为 2.38 eV,阱态密度低至 6.9 × 10- 15 cm- 3,载流子迁移率约为 19.8 cm2V- 1s-1。此外,还制作出了基于 CsPbBr3 NCs 的自供电光电探测器,该探测器具有较高的载流子电荷转移能力。该器件在室温下的暗电流密度低至 1.93 × 10- 7 A/cm2。这种光电探测器的最高响应率为 3.0 AW-1,比检测率为 1.2 × 1013 Jones,零偏置电压下的外部量子效率(EQE)为 920%。所提出的方法为实验室制造基于纳米晶体包晶材料薄膜的光电器件带来了巨大的前景。
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来源期刊
Electronic Materials Letters
Electronic Materials Letters 工程技术-材料科学:综合
CiteScore
4.70
自引率
20.80%
发文量
52
审稿时长
2.3 months
期刊介绍: Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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