Performance Enhancement of Perovskite Solar Cell Using SrTiO3 as Electron Transport Layer

Abstract

Now a days there is growing demand to generate renewable energy having environment friendly materials with widely used methods exhibiting highly productive conversion of photons into electrical power. In this article, an inorganic lead-free perovskite CsSn0.5Ge0.5I3 material is utilized as an absorber layer, PTAA as hole transport layer (HTL) and SrTiO3 as electron transport layer (ETL). Parameters such as thickness of absorber layer and operating temperature of device is varied to obtain an optimized photovoltaic performance parameter. The optimized simulated result at 250 nm thickness of absorber layer for n-i-p planar structure with performances of short circuit current density of 27.7592 mA/cm2 open circuit voltage of 0.9834 V, Fill factor of 78.01% and power conversion efficiency of 21.30% are obtained, which is considerably better than the previously reported work. The proposed configuration is studied using SCAPS-1D. The proposed device confirms better performance and it could be a promising candidate for cheaper and efficient PSCs.