A. C. Vilas Bôas, Saulo Gabriel Alberton, Nilberto H. Medina, Vitor Ângelo Paulino, Marco Antonio Assis Melo, Roberto Baginski Santos, R. Giacomini, T. Cavalcante, Rafael Galhardo Vaz, E. Junior, L. Seixas, S. Finco, M. Guazzelli
{"title":"Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET","authors":"A. C. Vilas Bôas, Saulo Gabriel Alberton, Nilberto H. Medina, Vitor Ângelo Paulino, Marco Antonio Assis Melo, Roberto Baginski Santos, R. Giacomini, T. Cavalcante, Rafael Galhardo Vaz, E. Junior, L. Seixas, S. Finco, M. Guazzelli","doi":"10.29292/jics.v16i3.566","DOIUrl":null,"url":null,"abstract":"In this work, measurements were taken to investigate the robustness of a GaN HEMT to TID by a 60CO Source. These results will be compared with a previous X-ray based work. The robustness was investigated through IxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on- and off- state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Mainly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the VTH values due to the TID, in this device is independent of the dose rate and the radiation source. ","PeriodicalId":39974,"journal":{"name":"Journal of Integrated Circuits and Systems","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29292/jics.v16i3.566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 2
Abstract
In this work, measurements were taken to investigate the robustness of a GaN HEMT to TID by a 60CO Source. These results will be compared with a previous X-ray based work. The robustness was investigated through IxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on- and off- state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Mainly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the VTH values due to the TID, in this device is independent of the dose rate and the radiation source.
期刊介绍：
This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
