Preliminary study of 50 W Class-E GaN FET amplifier for 6.78 MHz capacitive wireless power transfer

Journal of Mechatronics Electrical Power and Vehicular Technology Pub Date : 2020-07-30 DOI:10.14203/j.mev.2020.v11.22-29

A. Muharam, T. Mostafa, Suziana Ahmad, M. Masuda, Daiki Obara, R. Hattori, A. Hapid

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引用次数: 3

Abstract

A preliminary study of Class-E radio frequency power amplifier for wireless capacitive power transfer (CPT) system is presented in this paper. Due to a limitation in coupling capacitance value, a high frequency operation of switching power inverter is necessary for the CPT system. A GaN MOSFET offers reliability and performance in a high frequency operation with an improved efficiency over a silicon device. Design specification related to the parallel load parameter, LC impedance matching and experimental analysis of the amplifier is explored. An experimental setup for the proposed inverter and its integration with the CPT system is provided, and the power efficiency is investigated. As a result, by utilizing a 6.78 MHz resonant frequency and a 50 Ω resistive load, 50 W of power has been transmitted successfully with an end to end system efficiency over 81 %. Additionally, above 17 W wireless power transfer was demonstrated successfully in the CPT system under 6 pF coupling with the efficiency over 70 %.

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用于6.78 MHz电容式无线功率传输的50w e类GaN场效应晶体管放大器的初步研究

本文对用于无线电容功率传输系统的e类射频功率放大器进行了初步研究。由于耦合电容值的限制，CPT系统需要开关电源逆变器的高频工作。GaN MOSFET在高频操作中提供可靠性和性能，并且比硅器件的效率更高。探讨了放大器的并联负载参数、LC阻抗匹配和实验分析等相关设计规范。给出了该逆变器的实验装置及其与CPT系统的集成，并对其功率效率进行了研究。因此，通过利用6.78 MHz的谐振频率和50 Ω电阻负载，50 W的功率已成功传输，端到端系统效率超过81%。此外，在6pf耦合下，在CPT系统中成功演示了17w以上的无线功率传输，效率超过70%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Mechatronics Electrical Power and Vehicular Technology

CiteScore

0.70

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0.00%

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