Impurity analysis of electroplated gold components with multi-layered structures by thermal desorption spectrometry toward application in gold Micro electro mechanical system capacitive accelerometers

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Micro and Nano Engineering Pub Date : 2023-09-04 DOI:10.1016/j.mne.2023.100226
Takumi Akiyama , Tomoyuki Kurioka , Chun-Yi Chen , Tso-Fu Mark Chang , Parthojit Chakraborty , Katsuyuki Machida , Hiroyuki Ito , Yoshihiro Miyake , Masato Sone
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Abstract

Au-based micro-electro-mechanical-system (Au-MEMS) capacitance accelerometers show high sensitivity by suppressing the mechanical noise because of the high mass density of gold (ρ = 19.3 g/cm3). On the other hand, their long-term reliability suffers from drift phenomena induced by the impurities incorporated in the key component during their fabrication process, such as the gold electroplating step. Herein, impurities in electroplated Au-based components for MEMS capacitive accelerometers are evaluated by thermal desorption spectrometry (TDS) measurements. The TDS measurement reveals that dominant desorption gases from the Au-based component are molecular hydrogen (H2) and water (H2O). These desorption gases are derived from impurities in the electroplated Au-based component, and the amount of these gases is significantly suppressed by a thermal treatment step. In conclusion, this study demonstrates that the electroplated Au-based component contains impurities originated from the fabrication process, and these impurities could be removed by a thermal treatment step.

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多层结构电镀金元件的热解吸光谱杂质分析及其在金微机电系统电容加速度计中的应用
Au基微机电系统(Au MEMS)电容加速度计由于金的高质量密度(ρ=19.3g/cm3)而抑制了机械噪声,表现出较高的灵敏度。另一方面,在其制造过程中,关键部件中掺入的杂质会导致其长期可靠性出现漂移现象,例如镀金步骤。在此,通过热解吸光谱法(TDS)测量来评估用于MEMS电容式加速度计的电镀Au基元件中的杂质。TDS测量表明,Au基组分的主要解吸气体是分子氢(H2)和水(H2O)。这些解吸气体来源于电镀Au基部件中的杂质,并且通过热处理步骤显著抑制了这些气体的量。总之,本研究表明,电镀Au基部件含有源自制造过程的杂质,这些杂质可以通过热处理步骤去除。
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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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