Simultaneous Suppression of IMD3 and IMD5 in Space TWT by IMD3 and 2HD Signal Injection

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2017-01-10 DOI:10.1155/2017/4721048

Dongming Zhao, Huijuan Liu, Ke-wen Xia, Shi Li, Xiaoxu Shi

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引用次数: 2

Abstract

This paper presents a signal injection technology showing significant reductions in both 3rd-order and 5th-order intermodulation distortions (IMD3 and IMD5) in space traveling wave tube (STWT). By applying the IMD3 to the IMD5 ratio (TFR) as measures of location, the simultaneous suppressions of IMD3 and IMD5 in TWT are achieved by second harmonic distortion (2HD) and IMD3 injection. According to the research on theoretical analysis and computer simulation, the optimum amplitude and phase parameters of the injected signal for maximum simultaneous suppressions are obtained. Then an experiment system is established based on vector network analyzer, optimum TFR are 2.1 dB and 12.5 dB, respectively, by second harmonic and IM3 injection, and the output powers of IMD3 and IMD5 were decreased. TFR with IMD3 injection is smaller than that with second harmonic injection in STWT, and the experiment system is more straightforward and easy to operate. Thus, the IMD3 injection performs better than that of second harmonic injection to suppress IMD5s for the narrow-band STWT.

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IMD3和2HD信号注入对空间行波管中IMD3和IMD5的同时抑制

本文提出了一种信号注入技术，该技术显著降低了空间行波管（STWT）中的三阶和五阶互调失真（IMD3和IMD5）。通过将IMD3应用于IMD5比率（TFR）作为位置的测量，通过二次谐波失真（2HD）和IMD3注入来实现TWT中IMD3和IMD5的同时抑制。通过理论分析和计算机仿真研究，得到了最大同时抑制时注入信号的最佳幅度和相位参数。然后建立了基于矢量网络分析仪的实验系统，优化TFR为2.1 dB和12.5 通过二次谐波和IM3注入，IMD3和IMD5的输出功率分别降低。与STWT中的二次谐波注入相比，IMD3注入的TFR更小，并且实验系统更简单易操作。因此，IMD3注入比二次谐波注入执行得更好，以抑制窄带STWT的IMD5s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.