Zhentao Wang, Pai Peng, Sujuan Zhong, Yafang Cheng, Dong Xu
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引用次数: 1
Abstract
Purpose
The purpose of this paper on the one hand is to reduce the sintering temperature, shorten the sintering time and improve the electrical properties of the sample through the two-step flash sintering method and on the other hand is to study the effect of electric field on the phase structure, microstructure and electrical properties of the flash sintering sample.
Design/methodology/approach
In this paper, (Mg1/3Ta2/3)0.01Ti0.99O2 giant dielectric ceramics were prepared by conventional sintering and two-step flash sintering, respectively. Further, the effect of electric field (600–750 V/cm) on the electrical properties of (Mg1/3Ta2/3)0.01Ti0.99O2 giant dielectric ceramics was studied.
Findings
The results show that compared with the conventional sintering, the sintering temperature of the two-step flash sintering can be reduced by 200°C and the sintering time can be shortened by 12 times. All sintered samples were single rutile TiO2 structure. Compared with conventional sintering, two-step flash sintering samples have finer grain size. The two-step flash sintered sample has similar dielectric properties to the conventional sintered sample. The dielectric constant of flash sintered samples decreases with the increase of electric field. When the electric field is 700 V/cm, the ceramic sample has the optimal dielectric properties, where the dielectric constant is approximately 5.5 × 103 and the dielectric loss is about 0.18 at 1 kHz. Impedance spectroscopy analysis shows that the excellent dielectric properties are attributed to the internal barrier layer capacitance model.
Originality/value
This paper not only provides a new method for the preparation of co-doped TiO2 giant dielectric ceramics but also has great potential in greatly improving efficiency and saving energy.
期刊介绍:
Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details.
Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are:
• Advanced packaging
• Ceramics
• Chip attachment
• Chip on board (COB)
• Chip scale packaging
• Flexible substrates
• MEMS
• Micro-circuit technology
• Microelectronic materials
• Multichip modules (MCMs)
• Organic/polymer electronics
• Printed electronics
• Semiconductor technology
• Solid state sensors
• Thermal management
• Thick/thin film technology
• Wafer scale processing.