Memristor-Based Binarized Spiking Neural Networks: Challenges and applications

IF 2.3 Q3 NANOSCIENCE & NANOTECHNOLOGY IEEE Nanotechnology Magazine Pub Date : 2022-04-01 DOI:10.1109/mnano.2022.3141443
J. Eshraghian, Xinxin Wang, W. Lu
{"title":"Memristor-Based Binarized Spiking Neural Networks: Challenges and applications","authors":"J. Eshraghian, Xinxin Wang, W. Lu","doi":"10.1109/mnano.2022.3141443","DOIUrl":null,"url":null,"abstract":"Memristive arrays are a natural fit to implement spiking neural network (SNN) acceleration. Representing information as digital spiking events can improve noise margins and tolerance to device variability compared to analog bitline current summation approaches to multiply–accumulate (MAC) operations. Restricting neuron activations to single-bit spikes also alleviates the significant analog-to-digital converter (ADC) overhead that mixed-signal approaches have struggled to overcome. Binarized, and more generally, limited-precision, NNs are considered to trade off computational overhead with model accuracy, but unlike conventional deep learning models, SNNs do not encode information in the precision-constrained amplitude of the spike. Rather, information may be encoded in the spike time as a temporal code, in the spike frequency as a rate code, and in any number of stand-alone and combined codes. Even if activations and weights are bounded in precision, time can be thought of as continuous and provides an alternative dimension to encode information in. This article explores the challenges that face the memristor-based acceleration of NNs and how binarized SNNs (BSNNs) may offer a good fit for these emerging hardware systems.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"14-23"},"PeriodicalIF":2.3000,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Nanotechnology Magazine","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mnano.2022.3141443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 27

Abstract

Memristive arrays are a natural fit to implement spiking neural network (SNN) acceleration. Representing information as digital spiking events can improve noise margins and tolerance to device variability compared to analog bitline current summation approaches to multiply–accumulate (MAC) operations. Restricting neuron activations to single-bit spikes also alleviates the significant analog-to-digital converter (ADC) overhead that mixed-signal approaches have struggled to overcome. Binarized, and more generally, limited-precision, NNs are considered to trade off computational overhead with model accuracy, but unlike conventional deep learning models, SNNs do not encode information in the precision-constrained amplitude of the spike. Rather, information may be encoded in the spike time as a temporal code, in the spike frequency as a rate code, and in any number of stand-alone and combined codes. Even if activations and weights are bounded in precision, time can be thought of as continuous and provides an alternative dimension to encode information in. This article explores the challenges that face the memristor-based acceleration of NNs and how binarized SNNs (BSNNs) may offer a good fit for these emerging hardware systems.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于忆阻器的二值化脉冲神经网络:挑战与应用
忆阻阵列是实现尖峰神经网络(SNN)加速的自然选择。与乘法-累加(MAC)操作的模拟位线电流求和方法相比,将信息表示为数字尖峰事件可以提高噪声裕度和对设备可变性的容忍度。将神经元激活限制在单个位尖峰也减轻了混合信号方法难以克服的显著模数转换器(ADC)开销。神经网络被认为是二值化的,更普遍地说是有限精度的,可以权衡计算开销和模型精度,但与传统的深度学习模型不同,神经网络不以尖峰的精度约束幅度编码信息。相反,信息可以在尖峰时间中编码为时间码,在尖峰频率中编码为速率码,以及在任何数量的独立码和组合码中编码。即使激活和权重的精度是有限的,时间也可以被认为是连续的,并提供了一个替代的维度来编码信息。本文探讨了基于忆阻器的神经网络加速所面临的挑战,以及二进制神经网络(BSNN)如何很好地适应这些新兴的硬件系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Nanotechnology Magazine
IEEE Nanotechnology Magazine NANOSCIENCE & NANOTECHNOLOGY-
CiteScore
2.90
自引率
6.20%
发文量
46
期刊介绍: IEEE Nanotechnology Magazine publishes peer-reviewed articles that present emerging trends and practices in industrial electronics product research and development, key insights, and tutorial surveys in the field of interest to the member societies of the IEEE Nanotechnology Council. IEEE Nanotechnology Magazine will be limited to the scope of the Nanotechnology Council, which supports the theory, design, and development of nanotechnology and its scientific, engineering, and industrial applications.
期刊最新文献
Guest Editorial [Guest Editorial] The MENED Program at Nanotechnology Council [Column] The Editors’ Desk [Editor's Desk] President's Farewell Message [President's Farewell Message] 2023 Index IEEE Nanotechnology Magazine Vol. 17
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1