Surface microstructures and oxygen evolution properties of cobalt oxide deposited on Ir(111) and Pt(111) single crystal substrates

IF 2.9 Q2 ELECTROCHEMISTRY Electrochemical science advances Pub Date : 2022-09-11 DOI:10.1002/elsa.202200007

Naoto Todoroki, Hiroto Tsurumaki, Arata Shinomiya, Toshimasa Wadayama

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引用次数: 1

Abstract

We investigated the oxygen evolution reaction (OER) activity changes of cobalt oxide (CoO_x) thin films on Ir(111) and Pt(111) substrates by repeated OER measurements in 0.1 M KOH. Atomic force microscopy and X-ray photoelectron spectroscopy analysis of the as-prepared CoO_x/Ir(111) and CoO_x/Pt(111) showed similar surface morphologies of the CoO_x thin films and almost the same OER overpotentials, which were estimated to be around 430 mV. However, after three OER measurements, the overpotential of CoO_x/Ir(111) decreased by 70 mV, whereas that of CoO_x/Pt(111) increased slightly. Structural analysis showed that CoO_x/Ir(111) revealed the island-like nanostructures of CoO_x dispersed on Ir(111) surface, accompanied by the generation of CoOOH. In contrast, for CoO_x/Pt(111), the Pt(111) substrate remains covered by the CoO_x thin film. The results suggest that the interaface at CoO_x (CoOOH) nano-islands and Ir(111) substrate are responsible for reducing the OER overpotential.

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Ir（111）和Pt（111

我们通过在 0.1 M KOH 中反复测量氧化钴（CoOx）薄膜在 Ir(111) 和 Pt(111) 基底上的氧演化反应（OER）活性变化进行了研究。对制备的 CoOx/Ir(111) 和 CoOx/Pt(111) 进行的原子力显微镜和 X 射线光电子能谱分析表明，CoOx 薄膜的表面形态相似，OER 过电位几乎相同，估计在 430 mV 左右。然而，经过三次 OER 测量后，CoOx/Ir(111) 的过电位下降了 70 mV，而 CoOx/Pt(111) 的过电位则略有上升。结构分析表明，CoOx/Ir(111)显示了分散在 Ir(111) 表面的岛状 CoOx 纳米结构，并伴随着 CoOOH 的生成。相反，对于 CoOx/Pt(111)，铂(111)基底仍然被 CoOx 薄膜覆盖。结果表明，CoOx（CoOOH）纳米带和 Ir（111）基底之间的界面是降低 OER 过电位的原因。

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