Growth of hard metal films by deep oscillation magnetron sputtering

IF 2.4 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Surface Engineering Pub Date : 2023-05-04 DOI:10.1080/02670844.2023.2243000
Y.G. Li, C. Chen, W.Y. Liu, L. Li
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Abstract

ABSTRACT Pulsed vapour fluxes with proper controlled time duration were proved to be an important controlling dimension for the deposition of a desired thin film. In this work, deep oscillation magnetron sputtering was employed to tailor the ionized pulsed flux for Nb and Cr thin film grown on AISI 304 stainless steel. Through tuning the micropulse oscillating voltage-off time from 10 to 40 μs, Nb and Cr thin films showed an obvious variation on microstructure owing to the deposition flux transited from continuous to chopped ones. The deposited Nb thin films showed Nb(110) preferred orientation experienced a nanocrystallization process with compressive residual stress showing a slightly decrease. While Cr thin films showed Cr(110) preferred orientation without an obvious nancrystallization trend with its compressive stress turning to be tensile. The tailoring of the microstructure and properties relied on interval time between the two interrupted ionized deposition flux.
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深振荡磁控溅射生长硬质金属薄膜
具有适当控制持续时间的脉冲蒸汽通量被证明是沉积所需薄膜的重要控制尺度。在这项工作中,采用深振荡磁控溅射来定制在AISI 304不锈钢上生长的Nb和Cr薄膜的电离脉冲通量。通过将微脉冲振荡电压关断时间从10调整到40 μs、Nb和Cr薄膜由于沉积通量从连续过渡到短切,其微观结构发生了明显变化。沉积的Nb薄膜显示出Nb(110)的优选取向,经历了压缩残余应力显示出轻微降低的纳米化过程。Cr薄膜表现出Cr(110)的择优取向,压缩应力向拉伸转变,没有明显的纳米结晶趋势。微观结构和性能的调整取决于两个间断电离沉积通量之间的间隔时间。
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来源期刊
Surface Engineering
Surface Engineering 工程技术-材料科学:膜
CiteScore
5.60
自引率
14.30%
发文量
51
审稿时长
2.3 months
期刊介绍: Surface Engineering provides a forum for the publication of refereed material on both the theory and practice of this important enabling technology, embracing science, technology and engineering. Coverage includes design, surface modification technologies and process control, and the characterisation and properties of the final system or component, including quality control and non-destructive examination.
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