Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2017-06-14 DOI:10.1155/2017/2543917

Zhiqun Cheng, Xuefei Xuan, Huajie Ke, Guohua Liu, Zhihua Dong, S. Gao

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引用次数: 3

Abstract

The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

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带寄生补偿电路的0.8 ~ 2.7 GHz大功率f类谐波调谐功率放大器设计

介绍了一种高效率、高功率宽带GaN HEMT功率放大器的设计、实现和测量。新颖的补偿电路设计大大降低了封装寄生效应，提高了阻抗匹配的精度。在传统的f类结构的基础上，提出了一种改进的结构，分别有效地控制了全偶次谐波和三次谐波。将阶跃阻抗匹配方法应用到三次谐波控制网络中，对扩展带宽有积极的影响。利用CGH40025F功率晶体管构建工作在0.8 ~ 2.7 GHz的功率放大器，测量饱和输出功率20 ~ 50 W，漏极效率52% ~ 76%，增益电平在10 dB以上。第二和第三谐波抑制电平分别保持在−16至−36 dBc和−16至−33 dBc。仿真结果与实测结果吻合良好。

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来源期刊

Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

审稿时长

13 weeks

期刊介绍： Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.