Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2023-06-07 DOI:10.1007/s13391-023-00440-5

Yunki Kim, Kyu-Jin Jo, Jin-Su Oh, Cheol-Woong Yang

{"title":"Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window","authors":"Yunki Kim, Kyu-Jin Jo, Jin-Su Oh, Cheol-Woong Yang","doi":"10.1007/s13391-023-00440-5","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, a resistive random-access memory device based on a Ta/Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub>/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 10<sup>4</sup> s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 10<sup>3</sup>. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer was deposited in amorphous form. The composition and chemical bonding state of the Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer has strong potential for nonvolatile memory applications.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 1","pages":"26 - 32"},"PeriodicalIF":2.1000,"publicationDate":"2023-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00440-5","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

In this study, a resistive random-access memory device based on a Ta/Ta_xMn_yO_z/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 10⁴ s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 10³. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the Ta_xMn_yO_z layer was deposited in amorphous form. The composition and chemical bonding state of the Ta_xMn_yO_z layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous Ta_xMn_yO_z layer has strong potential for nonvolatile memory applications.

Graphical Abstract

Abstract Image

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

大阻窗ReRAM中Ta/TaxMnyOz/Pt结构的双极电阻开关特性

本研究制作并检验了一种基于 Ta/TaxMnyOz/Pt 金属绝缘体-金属结构的电阻式随机存取存储器件。测试器件具有稳定的双极电阻开关特性，直流电耐久性超过 300 次，室温下的稳健保持时间长达 104 秒。此外，该器件的形成电压较低，电阻窗口为 ~ 103。通过电流-电压曲线拟合分析了该器件各电阻状态下的传导机制。结果证实，在低电阻和高电阻状态下，主要传导机制分别是欧姆传导和普尔-弗伦克尔传导。通过透射电子显微镜分析所制造器件的横截面，发现 TaxMnyOz 层是以非晶态形式沉积的。此外，还利用 X 射线光电子能谱分析了 TaxMnyOz 层的成分和化学键状态。凭借这些特性，非晶态 TaxMnyOz 层在非易失性存储器应用方面具有很大的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.