Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques
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引用次数: 7
Abstract
Thisworkpresentsresultsofcomparativestudiesoftheopticalabsorptioncoefficientspectraofionimplantedlayersinsilicon.Threenondestructiveandnoncontacttechniqueswereusedforthispurpose:spectroscopicellipsometry(SE),modulatedfreecarriersabsorption(MFCA)andthephotothermalradiometry(PTR).ResultsobtainedwiththeellipsometricmethodaretheproofofcorrectnessoftheresultsobtainedwiththeMFCAandPTRtechniques.Thesetechniquesareusuallyusedforinvestigationsofrecombinationparametersofsemiconductors.Theyarenotusedforinvestigationsoftheopticalparametersofsemiconductors.OpticalabsorptioncoefficientspectraofFe + and Ge + high energy and dose implanted layers in silicon, obtained with the three techniques, are presented and compared.
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