A. Vanleenhove, C. Zborowski, I. Vaesen, I. Hoflijk, T. Conard
{"title":"HAXPES of GaN film on Si with Cr Kα photons","authors":"A. Vanleenhove, C. Zborowski, I. Vaesen, I. Hoflijk, T. Conard","doi":"10.1116/6.0000888","DOIUrl":null,"url":null,"abstract":"Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr Kα radiation at 5414.7 eV include a survey scan (Al Kα) and high-resolution spectra of Ga 3d, Ga 2p3/2, Ga 3p, Ga LMM, N 1s, C 1s, and O 1s.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":"28 1","pages":"014006"},"PeriodicalIF":1.6000,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Science Spectra","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0000888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 1
Abstract
Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr Kα radiation at 5414.7 eV include a survey scan (Al Kα) and high-resolution spectra of Ga 3d, Ga 2p3/2, Ga 3p, Ga LMM, N 1s, C 1s, and O 1s.
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