We report positive and negative ion time-of-flight secondary ion mass spectrometry (ToF-SIMS) spectra of metal-halide perovskite (MHP) films used for photovoltaic applications. This ToF-SIMS spectral library is of importance because it identifies the major peaks in most MHP films from organic [formamidinium (FA+)] and inorganic (Cs+) cations and anions (I− and Br−).
{"title":"Mixed-cation, mixed-halide perovskite ToF-SIMS spectra","authors":"Margherita Taddei, Daniel J. Graham","doi":"10.1116/6.0003624","DOIUrl":"https://doi.org/10.1116/6.0003624","url":null,"abstract":"We report positive and negative ion time-of-flight secondary ion mass spectrometry (ToF-SIMS) spectra of metal-halide perovskite (MHP) films used for photovoltaic applications. This ToF-SIMS spectral library is of importance because it identifies the major peaks in most MHP films from organic [formamidinium (FA+)] and inorganic (Cs+) cations and anions (I− and Br−).","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140983951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
ToF-SIMS is increasingly used to analyze cultural heritage materials because it can simultaneously detect organic and inorganic materials while mapping them on a surface. The precise identification of a pigment in a specific layer of a painting or of remaining color on a statue can inform about the technique used or the time of manufacture as well as expose possible forgeries when anachronistic ingredients are identified. Reference spectra are required to confidently identify a given pigment using ToF-SIMS. This database focuses on eight lead-based historical inorganic pigments, manufactured following traditional recipes. Lead pigments have been widely used in painting until the late 19th century. Here, the positive polarity ToF-SIMS reference spectra using a Bi3+ primary ion species are presented.
{"title":"ToF-SIMS spectra of historical inorganic pigments: Lead-based pigments in positive polarity","authors":"C. Bouvier, Sebastiaan Van Nuffel, Alain Brunelle","doi":"10.1116/6.0003507","DOIUrl":"https://doi.org/10.1116/6.0003507","url":null,"abstract":"ToF-SIMS is increasingly used to analyze cultural heritage materials because it can simultaneously detect organic and inorganic materials while mapping them on a surface. The precise identification of a pigment in a specific layer of a painting or of remaining color on a statue can inform about the technique used or the time of manufacture as well as expose possible forgeries when anachronistic ingredients are identified. Reference spectra are required to confidently identify a given pigment using ToF-SIMS. This database focuses on eight lead-based historical inorganic pigments, manufactured following traditional recipes. Lead pigments have been widely used in painting until the late 19th century. Here, the positive polarity ToF-SIMS reference spectra using a Bi3+ primary ion species are presented.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141016995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hard x-ray photoelectron spectroscopy using monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on sputtered In, Sn, and ITO samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.
使用单色 Cr Kα 辐射（5414.8 eV）的硬 X 射线光电子能谱获得了溅射 In、Sn 和 ITO 样品的 XPS 和奥杰数据。本文介绍了测量数据、所有观测到的光电子峰的高分辨率扫描以及奥杰线的高分辨率扫描。
{"title":"HAXPES reference spectra of In, Sn, and ITO with Cr Kα excitation","authors":"Dong Zheng, Christopher N. Young, W. Stickle","doi":"10.1116/6.0003489","DOIUrl":"https://doi.org/10.1116/6.0003489","url":null,"abstract":"Hard x-ray photoelectron spectroscopy using monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on sputtered In, Sn, and ITO samples. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141035168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Chourasia, Sahjahan Islam, Emmanuel Aloyine, Paradesh Adhikari
Thin films of cobalt (about 20 nm) were deposited on a silicon ⟨100⟩ substrate. The deposition was carried out using the e-beam technique. The films were oxidized under two different conditions: in vacuum and in a quartz tube furnace. The elemental cobalt and the two oxidized samples were characterized by the technique of x-ray photoelectron spectroscopy. Magnesium Kα radiation (1253.6 eV) was used as the source of the x-ray excitation. The spectral data in the cobalt 2p, 2s, 3s, 3p, Auger LMM regions, oxygen 1s region, and carbon 1s regions were recorded under a high resolution mode. The sample oxidized in vacuum showed features distinct from that oxidized in the quartz tube furnace. The data will serve as a comparison for the cobalt oxides formed under different processing conditions.
在硅⟨100⟩基底上沉积了钴薄膜（约 20 nm）。沉积采用电子束技术。薄膜在真空和石英管炉两种不同条件下进行氧化。通过 X 射线光电子能谱技术对元素钴和两种氧化样品进行了表征。镁 Kα 辐射（1253.6 eV）被用作 X 射线激发源。在高分辨率模式下记录了钴 2p、2s、3s、3p、奥格 LMM 区、氧 1s 区和碳 1s 区的光谱数据。在真空中氧化的样品与在石英管炉中氧化的样品显示出截然不同的特征。这些数据将用于比较在不同加工条件下形成的钴氧化物。
{"title":"Oxidation of cobalt as investigated by x-ray photoelectron spectroscopy","authors":"A. Chourasia, Sahjahan Islam, Emmanuel Aloyine, Paradesh Adhikari","doi":"10.1116/6.0003310","DOIUrl":"https://doi.org/10.1116/6.0003310","url":null,"abstract":"Thin films of cobalt (about 20 nm) were deposited on a silicon ⟨100⟩ substrate. The deposition was carried out using the e-beam technique. The films were oxidized under two different conditions: in vacuum and in a quartz tube furnace. The elemental cobalt and the two oxidized samples were characterized by the technique of x-ray photoelectron spectroscopy. Magnesium Kα radiation (1253.6 eV) was used as the source of the x-ray excitation. The spectral data in the cobalt 2p, 2s, 3s, 3p, Auger LMM regions, oxygen 1s region, and carbon 1s regions were recorded under a high resolution mode. The sample oxidized in vacuum showed features distinct from that oxidized in the quartz tube furnace. The data will serve as a comparison for the cobalt oxides formed under different processing conditions.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140713764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. David Gonzalez, Sergio A. Rincón-Ortiz, R. Ospina
Yttrium aluminum garnet (YAG) is a composite crystalline material used as a substrate in various optical applications, especially high-power lasers. It is currently doped with different elements depending on the desired application. This has generated small controversies depending on the fabrication method as well as the doping content. In the present work, a high-purity YAG single crystal was characterized using x-ray photoelectron spectroscopy (XPS) technique. Exploratory spectra, high-resolution spectra for C 1s, O 1s, Y 3d, and Al 2p, and valence band (VB) spectra were acquired. The results showed the presence of yttrium and aluminum oxides with the characteristic stoichiometry of YAG. In addition, the presence of adventitious carbon was detected, without the presence of impurities.
{"title":"Yttrium aluminum garnet analyzed by x-ray photoelectron spectroscopy","authors":"E. David Gonzalez, Sergio A. Rincón-Ortiz, R. Ospina","doi":"10.1116/6.0003128","DOIUrl":"https://doi.org/10.1116/6.0003128","url":null,"abstract":"Yttrium aluminum garnet (YAG) is a composite crystalline material used as a substrate in various optical applications, especially high-power lasers. It is currently doped with different elements depending on the desired application. This has generated small controversies depending on the fabrication method as well as the doping content. In the present work, a high-purity YAG single crystal was characterized using x-ray photoelectron spectroscopy (XPS) technique. Exploratory spectra, high-resolution spectra for C 1s, O 1s, Y 3d, and Al 2p, and valence band (VB) spectra were acquired. The results showed the presence of yttrium and aluminum oxides with the characteristic stoichiometry of YAG. In addition, the presence of adventitious carbon was detected, without the presence of impurities.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140088485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pierre-Marie Deleuze, N. Gauthier, K. Artyushkova, E. Martinez, Olivier Renault
Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy (HAXPES) data on pure Mo and bulk MoSe2 compound with special attention paid to binding energy scale correction and quantification. The reported spectra include a survey scan and high-resolution Mo 2s, Mo 2p1/2, Mo 2p3/2, Mo 3d, Mo 3p1/2, Mo 3p3/2, Mo 3s, Mo 4s, Mo4p, Se2s, Se 2p1/2, Se 2p3/2, Se 3s, Se 3p1/2, Se 3p3/2, and Se 3d core-levels. The data will be useful as reference core-level spectra for HAXPES studies on molybdenum and its compounds.
利用单色 Cr Kα 辐射（5414.8 eV）获取了纯钼和块状 MoSe2 化合物的高能光电子能谱（HAXPES）数据，并特别关注了结合能尺度的校正和量化。所报告的光谱包括勘测扫描和高分辨率 Mo 2s、Mo 2p1/2、Mo 2p3/2、Mo 3d、Mo 3p1/2、Mo 3p3/2、Mo 3s、Mo 4s、Mo 4p、Se2s、Se 2p1/2、Se 2p3/2、Se 3s、Se 3p1/2、Se 3p3/2 和 Se 3d 核心级。这些数据可作为钼及其化合物 HAXPES 研究的参考核级光谱。
{"title":"HAXPES reference spectra of bulk Mo and MoSe2 with Cr Kα excitation","authors":"Pierre-Marie Deleuze, N. Gauthier, K. Artyushkova, E. Martinez, Olivier Renault","doi":"10.1116/6.0003120","DOIUrl":"https://doi.org/10.1116/6.0003120","url":null,"abstract":"Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy (HAXPES) data on pure Mo and bulk MoSe2 compound with special attention paid to binding energy scale correction and quantification. The reported spectra include a survey scan and high-resolution Mo 2s, Mo 2p1/2, Mo 2p3/2, Mo 3d, Mo 3p1/2, Mo 3p3/2, Mo 3s, Mo 4s, Mo4p, Se2s, Se 2p1/2, Se 2p3/2, Se 3s, Se 3p1/2, Se 3p3/2, and Se 3d core-levels. The data will be useful as reference core-level spectra for HAXPES studies on molybdenum and its compounds.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140088332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ghulam Farid, S. Chaitoglou, R. Amade, R. Ospina, E. Bertran-Serra
Silicon nanowires were characterized by x-ray photoelectron spectroscopy with an Al Kα (1486.6 eV) excitation source. The sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. Survey spectrum and C 1s, O 1s, and Si 2p core-level spectra were acquired.
用 Al Kα (1486.6 eV) 激发光源对硅纳米线进行了 X 射线光电子能谱分析。样品用铜质双面胶带固定在不锈钢样品架上。获得了勘测光谱以及 C 1s、O 1s 和 Si 2p 核心级光谱。
{"title":"Silicon nanowires analyzed by x-ray photoelectron spectroscopy","authors":"Ghulam Farid, S. Chaitoglou, R. Amade, R. Ospina, E. Bertran-Serra","doi":"10.1116/6.0003388","DOIUrl":"https://doi.org/10.1116/6.0003388","url":null,"abstract":"Silicon nanowires were characterized by x-ray photoelectron spectroscopy with an Al Kα (1486.6 eV) excitation source. The sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. Survey spectrum and C 1s, O 1s, and Si 2p core-level spectra were acquired.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140422370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hard x-ray photoelectron spectroscopy (HAXPES) using monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on an argon gas cluster-sputtered CeO2 sample. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.
{"title":"HAXPES reference spectra of CeO2 with Cr Kα excitation","authors":"Dong Zheng, Christopher N. Young, W. Stickle","doi":"10.1116/6.0003208","DOIUrl":"https://doi.org/10.1116/6.0003208","url":null,"abstract":"Hard x-ray photoelectron spectroscopy (HAXPES) using monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on an argon gas cluster-sputtered CeO2 sample. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139593952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stuart A. Dunn, Aaron Wood, Paul Roussel, B. Spencer, Robert Harrison, Philip Kaye, Matthew A. Higginson
HAXPES measurements were carried out using a Scienta Omicron HAXPES instrument to provide reference spectra for depleted uranium dioxide. High purity uranium dioxide, as confirmed by trace elemental analysis and x-ray diffraction, was synthesized via the integrated dry route from uranium hexafluoride. The material was fixed on double sided carbon tape for the analysis with charge control measures in place. The expanded energy range, using a Ga Kα x-ray source, presents core level photoelectrons not observed in traditional XPS. In addition, a region associated with the x-ray induced Auger transitions MNN is evident at binding energies only achievable with HAXPES. The reference spectra presented here act as the first in a line of proposed investigations into the comparison of XPS and HAXPES from surface to bulk as well as a fundamental understanding of the electronic structure of uranium materials.
使用 Scienta Omicron HAXPES 仪器进行了 HAXPES 测量，以提供贫化二氧化铀的参考光谱。经痕量元素分析和 X 射线衍射确认的高纯度二氧化铀是通过六氟化铀的综合干法路线合成的。材料被固定在双面碳带上进行分析，并采取了电荷控制措施。利用 Ga Kα X 射线源，扩大了能量范围，呈现出传统 XPS 无法观察到的核心级光电子。此外，与 X 射线诱导的奥杰跃迁 MNN 相关的区域在 HAXPES 才能达到的结合能上也很明显。这里展示的参考光谱是 XPS 和 HAXPES 从表面到块体对比研究的第一部分，也是从根本上了解铀材料电子结构的第一步。
{"title":"HAXPES reference spectra of UO2 generated with Ga Kα x-ray source","authors":"Stuart A. Dunn, Aaron Wood, Paul Roussel, B. Spencer, Robert Harrison, Philip Kaye, Matthew A. Higginson","doi":"10.1116/6.0003057","DOIUrl":"https://doi.org/10.1116/6.0003057","url":null,"abstract":"HAXPES measurements were carried out using a Scienta Omicron HAXPES instrument to provide reference spectra for depleted uranium dioxide. High purity uranium dioxide, as confirmed by trace elemental analysis and x-ray diffraction, was synthesized via the integrated dry route from uranium hexafluoride. The material was fixed on double sided carbon tape for the analysis with charge control measures in place. The expanded energy range, using a Ga Kα x-ray source, presents core level photoelectrons not observed in traditional XPS. In addition, a region associated with the x-ray induced Auger transitions MNN is evident at binding energies only achievable with HAXPES. The reference spectra presented here act as the first in a line of proposed investigations into the comparison of XPS and HAXPES from surface to bulk as well as a fundamental understanding of the electronic structure of uranium materials.","PeriodicalId":22006,"journal":{"name":"Surface Science Spectra","volume":null,"pages":null},"PeriodicalIF":1.3,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139624352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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