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Cluster Mo2C deposited on graphene nanowalls by x-ray photoelectron spectroscopy 通过 X 射线光电子能谱研究沉积在石墨烯纳米壁上的簇状 Mo2C
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2024-01-08 DOI: 10.1116/6.0003125
S. Chaitoglou, Rogelio Ospina, E. Bertran-Serra
Molybdenum deposited on carbon graphene nanowalls was characterized by x-ray photoelectron spectroscopy with an Al Kα (1486.6 eV) excitation source. The sample was fixed to a stainless-steel sample holder with copper double-sided adhesive tape. Survey spectrum, C 1s, O 1s, Si 2p, and Mo 3d core levels spectra were acquired.
使用 Al Kα (1486.6 eV) 激发光源对沉积在碳石墨烯纳米壁上的钼进行了 X 射线光电子能谱表征。样品用铜质双面胶固定在不锈钢样品架上。获得了勘测谱、C 1s、O 1s、Si 2p 和 Mo 3d 核电平谱。
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引用次数: 0
HAXPES Cr Kα measurement of bulk germanium 块状锗的 HAXPES Cr Kα 测量
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-12-01 DOI: 10.1116/6.0003154
C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard
Bulk germanium was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of germanium obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of Ge 2s, Ge 2p3/2, Ge 3s, Ge 3p, and Ge 3d.
使用高分辨率高能 X 射线光电子能谱 (HAXPES) 分析了块状锗。利用 5414.8 eV 的单色 Cr Kα 辐射获得的锗 HAXPES 光谱包括 Ge 2s、Ge 2p3/2、Ge 3s、Ge 3p 和 Ge 3d 的勘测扫描和高分辨率光谱。
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引用次数: 0
HAXPES Cr Kα measurement of bulk indium 块状铟的 HAXPES Cr Kα 测量
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-12-01 DOI: 10.1116/6.0003161
C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard
Indium was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of indium obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of In 2s, In 2p3/2, In 3s, In 3p3/2, In 3d, In 4s, and In 4d.
利用高分辨率高能 X 射线光电子能谱(HAXPES)对铟进行了分析。使用 5414.8 eV 的单色 Cr Kα 辐射获得的铟 HAXPES 光谱包括铟 2s、铟 2p3/2、铟 3s、铟 3p3/2、铟 3d、铟 4s 和铟 4d 的勘测扫描和高分辨率光谱。
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引用次数: 0
High energy x-ray photoelectron spectroscopy Cr Kα measurement of bulk gadolinium 高能 X 射线光电子能谱 Cr Kα 测量块状钆
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-12-01 DOI: 10.1116/6.0003116
C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard
Gadolinium was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of gadolinium obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of Gd 3s, Gd 3p, Gd 3d, Gd 4s, Gd 4p, and Gd 4d.
利用高分辨率高能 X 射线光电子能谱(HAXPES)对钆进行了分析。利用 5414.8 eV 的单色 Cr Kα 辐射获得的钆 HAXPES 光谱包括钆 3s、钆 3p、钆 3d、钆 4s、钆 4p 和钆 4d 的勘测扫描和高分辨率光谱。
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引用次数: 0
HAXPES Cr Kα measurement of bulk hafnium 块状铪的 HAXPES Cr Kα 测量
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-12-01 DOI: 10.1116/6.0003155
C. Zborowski, A. Vanleenhove, I. Hoflijk, I. Vaesen, K. Artyushkova, T. Conard
Hafnium was analyzed using high-resolution high energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Hafnium obtained using monochromatic Cr Kα radiation at 5414.8 eV include survey scan and high-resolution spectra of Hf 3s, Hf 3p3/2, Hf 3d5/2, Hf 4p3/2, Hf 4d, and Hf 4f.
采用高分辨率高能x射线光电子能谱(HAXPES)对铪进行了分析。利用单色Cr Kα辐射在5414.8 eV下获得了铪的HAXPES光谱,包括Hf 3s、Hf 3p3/2、Hf 3d5/2、Hf 4p3/2、Hf 4d和Hf 4f的巡天扫描和高分辨率光谱。
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引用次数: 0
Analysis of copper metal with a K-Alpha instrument from Thermo Scientific by XPS at 60 and 200 eV pass energy 使用 Thermo Scientific 公司的 K-Alpha 仪器,在 60 和 200 eV 的通过能量下通过 XPS 分析金属铜
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-12-01 DOI: 10.1116/6.0002958
Annika M. Dean, Samira Jafari, M. Linford
Copper metal was analyzed by x-ray photoelectron spectroscopy (XPS) using a K-Alpha instrument from Thermo Scientific that employed an Al K-alpha x-ray source (1486.6 eV). The sample was the copper standard on the instrument sample stage that was sputtered with Ar+ to remove its oxide layer and hydrocarbon contamination. Shown in this work are the survey spectrum and high-resolution Cu 2p, Cu L3M45M45, Cu 3s, Cu 3p, O 1s, C 1s, and Ar 2p narrow scans. Narrow and survey scans were collected at 60 and 200 eV pass energy, respectively.
利用 Thermo Scientific 公司的 K-Alpha 仪器,采用 Al K-α X 射线源(1486.6 eV),通过 X 射线光电子能谱 (XPS) 分析金属铜。样品是仪器样品台上的铜标准样品,用 Ar+ 进行溅射以去除其氧化层和碳氢化合物污染。本研究中显示的是勘测光谱和高分辨率 Cu 2p、Cu L3M45M45、Cu 3s、Cu 3p、O 1s、C 1s 和 Ar 2p 窄扫描。窄扫描和勘测扫描分别在 60 和 200 eV 的通过能量下采集。
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引用次数: 0
HAXPES reference spectra of bulk W and WSe2 with Cr Kα excitation 使用 Cr Kα 激发的块状 W 和 WSe2 的 HAXPES 参考光谱
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-11-27 DOI: 10.1116/6.0003124
Pierre-Marie Deleuze, N. Gauthier, K. Artyushkova, E. Martinez, Olivier Renault
Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy data on pure W and bulk WSe2 compound. The reported spectra include a survey scan and high-resolution W 3p1/2, W 3p3/2, W 3d3/2, W 3d5/2, W 4s, W 4p1/2, W 4p3/2, W 4d, W 4f, Se 2s, Se 2p1/2, Se 2p3/2, Se 3s, and Se 3p core-levels. The data will be useful as reference core-level spectra for HAXPES studies on tungsten and its compounds.
利用单色 Cr Kα 辐射(5414.8 eV)获取了纯 W 和块状 WSe2 化合物的高能光电子能谱数据。所报告的光谱包括普查扫描和高分辨率 W 3p1/2、W 3p3/2、W 3d3/2、W 3d5/2、W 4s、W 4p1/2、W 4p3/2、W 4d、W 4f、Se 2s、Se 2p1/2、Se 2p3/2、Se 3s 和 Se 3p 核心级。这些数据可作为钨及其化合物 HAXPES 研究的参考核级光谱。
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引用次数: 0
XPS study of NiO thin films obtained by chemical vapor deposition 化学气相沉积法获得的氧化镍薄膜的 XPS 研究
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-11-16 DOI: 10.1116/6.0003008
Gioele Pagot, M. Benedet, C. Maccato, D. Barreca, V. Di Noto
Nickel oxide (NiO) thin films are of great importance for a variety of technological applications, especially in (photo)electrocatalysis for clean energy production and pollutant degradation. In this field, various research efforts are devoted to the preparation of thin films with controllable chemicophysical properties. In the framework of our research activities, we have recently fabricated NiO thin films by means of chemical vapor deposition (CVD) using a series of closely related Ni(II) β-diketonate-diamine molecular precursors. In the present work, the attention is focused on the x-ray photoelectron spectroscopy (XPS) analysis of a representative NiO film grown at 400 °C in an O2 + H2O reaction atmosphere. Besides the wide scan spectrum, high resolution spectra for C 1s, O 1s, and, in particular, Ni 2p are reported and discussed in detail.
氧化镍(NiO)薄膜在各种技术应用中具有重要意义,尤其是在清洁能源生产和污染物降解的(光)电催化方面。在这一领域,各种研究工作都致力于制备具有可控化学物理性质的薄膜。在我们的研究活动框架内,我们最近利用一系列密切相关的 Ni(II) β-二酮酸二胺分子前驱体,通过化学气相沉积(CVD)的方法制备了 NiO 薄膜。在本研究中,重点对 400 °C 下在 O2 + H2O 反应气氛中生长的具有代表性的氧化镍薄膜进行了 X 射线光电子能谱(XPS)分析。除了宽扫描光谱外,还报告并详细讨论了 C 1s、O 1s 特别是 Ni 2p 的高分辨率光谱。
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引用次数: 0
HAXPES reference spectra of KI with Cr Kα excitation KI 在 Cr Kα 激发下的 HAXPES 参考光谱
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-11-15 DOI: 10.1116/6.0003110
Dong Zheng, Christopher N. Young, W. Stickle
Hard X-ray Photoelectron Spectroscopy (HAXPES) using monochromatic Cr Kα radiation (5414.8 eV) has been used to acquire XPS and Auger data on a sputtered potassium iodide (KI) sample. Survey data, high-resolution scans of all observed photoelectron peaks, and high-resolution scans of Auger lines are presented herein.
使用单色 Cr Kα 辐射(5414.8 eV)的硬 X 射线光电子能谱 (HAXPES) 获得了溅射碘化钾 (KI) 样品的 XPS 和奥杰线数据。本文介绍了测量数据、所有观测到的光电子峰的高分辨率扫描以及奥杰线的高分辨率扫描。
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引用次数: 0
ZnO by Ag Lα, hard x-ray photoelectron spectroscopy 氧化锌与 Ag Lα、硬 X 射线光电子能谱的关系
IF 1.3 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2023-11-15 DOI: 10.1116/6.0003126
Sergio A. Rincón-Ortiz, J. H. Quintero‐Orozco, Rogelio Ospina
Zinc oxide powder was characterized by hard x-ray photoelectron spectroscopy (HAXPES) with an Ag Lα (2984.2 eV) excitation source. The sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. Survey spectrum, C 1s, O 1s, Zn 2p, and Zn LMM core levels’ spectra were acquired.
使用 Ag Lα (2984.2 eV) 激发光源的硬 X 射线光电子能谱 (HAXPES) 对氧化锌粉末进行了表征。样品用铜质双面胶带固定在不锈钢样品支架上。采集了勘测谱、C 1s、O 1s、Zn 2p 和 Zn LMM 核级光谱。
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引用次数: 0
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Surface Science Spectra
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