C-V model of CdS/CdTe thin-film solar cells dependent on applied voltage frequency

IF 1.2 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY Revista Mexicana De Fisica Pub Date : 2023-07-04 DOI:10.31349/revmexfis.69.041604
P. Hernandez-Leon, F. Castillo-Alvarado, A. Gonzalez-Cisneros, A. A. Duran-Ledezma
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Abstract

In CdS/CdTe solar cells, the dependence on the frequency of the applied voltage is essential to improve theoretical results. Our model is based on the conservation of energy and charge and considering a ternary layer and the existence of plasmons in the interface. In this work, the capacitance dependence as a function of the frequency of the induced field in the heterojunction is observed; furthermore, a plasmon was formed in the interface in the surface semiconductor. The results provided with the theoretical model were compared with the experimental data, and a better adjustment was obtained.
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CdS/CdTe薄膜太阳能电池随外加电压频率的C-V模型
在CdS/CdTe太阳能电池中,对所施加电压的频率的依赖性对于改进理论结果至关重要。我们的模型基于能量和电荷守恒,并考虑了三元层和界面中等离子体的存在。在这项工作中,观察到了作为异质结中感应场频率函数的电容依赖性;此外,在表面半导体中的界面中形成等离子体激元。将理论模型提供的结果与实验数据进行了比较,获得了更好的调整效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Revista Mexicana De Fisica
Revista Mexicana De Fisica 物理-物理:综合
CiteScore
2.20
自引率
11.80%
发文量
87
审稿时长
4-8 weeks
期刊介绍: Durante los últimos años, los responsables de la Revista Mexicana de Física, la Revista Mexicana de Física E y la Revista Mexicana de Física S, hemos realizado esfuerzos para fortalecer la presencia de estas publicaciones en nuestra página Web ( http://rmf.smf.mx).
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