Study effect of incidence angle on ion implantation in ZnO matrix

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2023-07-05 DOI:10.15251/jor.2023.193.345
H. Aissania, K. Hami, A. Talhi
{"title":"Study effect of incidence angle on ion implantation in ZnO matrix","authors":"H. Aissania, K. Hami, A. Talhi","doi":"10.15251/jor.2023.193.345","DOIUrl":null,"url":null,"abstract":"The ion implantation method is one of the techniques used to dope the materials. The TRIM software (Transport and Range of Ions in Mater) created by Ziegler and colleagues [1] can simulate it. In this work, we studied the effect of incidence angles for different energies on the distribution of implant ions in the target by using the TRIM software, and several processes resulting from the interaction between Potassium ions and the target atoms are examined. Simulated physical effects are intriguing.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2023.193.345","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The ion implantation method is one of the techniques used to dope the materials. The TRIM software (Transport and Range of Ions in Mater) created by Ziegler and colleagues [1] can simulate it. In this work, we studied the effect of incidence angles for different energies on the distribution of implant ions in the target by using the TRIM software, and several processes resulting from the interaction between Potassium ions and the target atoms are examined. Simulated physical effects are intriguing.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
研究入射角对ZnO基体中离子注入的影响
离子注入法是用于掺杂材料的技术之一。Ziegler及其同事[1]创建的TRIM软件(Mater中离子的传输和射程)可以模拟它。在这项工作中,我们使用TRIM软件研究了不同能量的入射角对目标中注入离子分布的影响,并考察了钾离子与目标原子相互作用产生的几个过程。模拟的物理效应很有趣。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
期刊最新文献
Modified nonlinear ion drift model for TiO2 memristor: a temperature dependent study Electrochemical performance of rice grains like high Mn-doped anatase TiO2 nanoparticles as lithium-ion batteries electrode material Probing optoelectronic and thermoelectric properties of double perovskite halides Li2CuInY6 (Y = Cl, Br, I) for energy conversion applications Absorber layer improvement and performance analysis of CIGS thin-film solar cell Investigations on synthesis, growth and characterisations of a NLO material: L-Tryptophanium phosphite (LTP)
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1