A. Douara, A. Rabehi, Oussama Baitiche, M. Handami
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引用次数: 0
Abstract
This research aims to study the impact of some physical and structural parameters on the I–V characteristics of a high electron mobility transistors (HEMTs) based on AlxGa1-x N/GaN, we investigate the effect of the GaN buffer layer thickness and the impact of other properties of the materials such as aluminum mole fraction and doping concentration, the Al0.2Ga0.8 N/GaN heterostructures with 400 nm of buffer layer and a layer doped with n = 4 x 1018 cm-3 , for this structure we find the maximum saturation current of 420 mA/mm . The proposed model included GaN buffer layer and Al content were derived from our developed I-V characteristics. The proposed model is in excellent agreement with the simulated I-V characteristics and experimental results.
期刊介绍:
Durante los últimos años, los responsables de la Revista Mexicana de Física, la Revista Mexicana de Física E y la Revista Mexicana de Física S, hemos realizado esfuerzos para fortalecer la presencia de estas publicaciones en nuestra página Web ( http://rmf.smf.mx).