Effect of Temperature on I-V Characteristic for ZnO/CuO

M. Dirar, Farhah Elfadel Omer, R. Abdelgani, A. S. Mohamed, A. A. Elamin, B. Ahamed, M. Ali, A. Mohamed
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Abstract

Research on nonmaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. Among those materials, zinc oxide (ZnO) has gained substantial attention owing to many outstanding properties. ZnO besides its wide band gap of 3.34 eV exhibits a relatively large excitons binding energy (60 meV) at room temperature which is attractive for optoelectronic applications. Likewise, cupric oxide (CuO) has a narrow band gap of 1.2 eV and a variety of chemo-physical properties that are attractive in many fields. Moreover, composite nanostructures of these two oxides (CuO/ZnO) may pave the way for various new applications. So in this thesis, eight samples of CuO/ZnO junction were synthesized and exposed to temperatures 60, 70, 80, 90, 100, 110, 120 and 130. The electrical properties of Schottky diode junctions were analyzed by I-V measurements under the influence of direct solar radiation and, lag of radiation (darkness) which shows the semi-logarithmic I-V characteristic curve of the fabricated photodiodes. Also energy band gap was estimated and the morphology and particle sizes of the as-prepared sample were determined by SEM. The SEM images of ZnO + CuO sample films were annealed at 60°C to 130°C step 10.
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温度对ZnO/CuO I-V特性的影响
与大块材料相比,非材料由于其独特的物理、化学、光学和催化性能而越来越受欢迎。因此,人们已经做出了许多努力来合成用于新型高效纳米器件的多维纳米结构。在这些材料中,氧化锌(ZnO)由于其许多优异的性能而受到广泛关注。ZnO除了具有3.34eV的宽带隙外,在室温下还表现出相对较大的激子结合能(60meV),这对于光电子应用是有吸引力的。同样,氧化铜(CuO)具有1.2eV的窄带隙和在许多领域具有吸引力的各种化学物理性质。此外,这两种氧化物(CuO/ZnO)的复合纳米结构可能为各种新的应用铺平道路。因此,本文合成了8个CuO/ZnO结样品,并将其暴露在60、70、80、90、100、110、120和130的温度下。在太阳直接辐射和辐射滞后(黑暗)的影响下,通过I-V测量分析了肖特基二极管结的电学特性,这显示了所制造的光电二极管的半对数I-V特性曲线。此外,还估算了能带隙,并通过SEM确定了所制备样品的形貌和粒度。ZnO+CuO样品膜的SEM图像在60°C至130°C下退火步骤10。
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