Effects of 60Co γ ray radiation on the transmission characteristics of interconnection structures for 3D packaging

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics International Pub Date : 2022-09-22 DOI:10.1108/mi-07-2022-0120

Youxin Zhang, Yang Liu, Rongxing Cao, Xianghua Zeng, Yuxiong Xue

{"title":"Effects of 60Co γ ray radiation on the transmission characteristics of interconnection structures for 3D packaging","authors":"Youxin Zhang, Yang Liu, Rongxing Cao, Xianghua Zeng, Yuxiong Xue","doi":"10.1108/mi-07-2022-0120","DOIUrl":null,"url":null,"abstract":"\nPurpose\nConcerning the radiation effects on the three-dimensional (3D) packaging in space environment, this study aims to investigate the influence of the total dose effect on the transmission characteristics of high-frequency electrical signals using experimental and simulation methods.\n\n\nDesign/methodology/approach\nThis work carries out the irradiation test of the specimens and measures their S21 parameters before and after irradiation. A simulation model describing the total dose effect was built based on the experimental test results. And, the radiation hardening design is evaluated by the simulation method.\n\n\nFindings\nThe experimental results demonstrate that the S21 curve of the interconnection decreases with the increase of the irradiation dose, indicating that the total dose effect leads to the decline of its signal transmission characteristics. According to the simulation results, decreasing the height of the through silicon via (TSV), increasing the radius of the TSV, reducing the length of Si and increasing the number of grounded through silicon via have positive effects on improving the radiation resistance of the interconnection structure.\n\n\nOriginality/value\nThis work investigates the effect of radiation on the transmission characteristics of interconnection structures for 3D packaging and proposes the hardening design methods. It is meaningful for improving the reliability of 3D packaging in space applications.\n","PeriodicalId":49817,"journal":{"name":"Microelectronics International","volume":null,"pages":null},"PeriodicalIF":0.7000,"publicationDate":"2022-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics International","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1108/mi-07-2022-0120","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Purpose Concerning the radiation effects on the three-dimensional (3D) packaging in space environment, this study aims to investigate the influence of the total dose effect on the transmission characteristics of high-frequency electrical signals using experimental and simulation methods. Design/methodology/approach This work carries out the irradiation test of the specimens and measures their S21 parameters before and after irradiation. A simulation model describing the total dose effect was built based on the experimental test results. And, the radiation hardening design is evaluated by the simulation method. Findings The experimental results demonstrate that the S21 curve of the interconnection decreases with the increase of the irradiation dose, indicating that the total dose effect leads to the decline of its signal transmission characteristics. According to the simulation results, decreasing the height of the through silicon via (TSV), increasing the radius of the TSV, reducing the length of Si and increasing the number of grounded through silicon via have positive effects on improving the radiation resistance of the interconnection structure. Originality/value This work investigates the effect of radiation on the transmission characteristics of interconnection structures for 3D packaging and proposes the hardening design methods. It is meaningful for improving the reliability of 3D packaging in space applications.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

60Coγ射线辐射对三维封装互连结构传输特性的影响

目的针对空间环境中三维封装的辐射效应，采用实验和仿真方法，研究总剂量效应对高频电信号传输特性的影响。设计/方法/方法本工作对试样进行辐照试验，并在辐照前后测量其S21参数。基于实验测试结果，建立了描述总剂量效应的仿真模型。并采用仿真方法对辐射硬化设计进行了评价。实验结果表明，互连的S21曲线随着辐照剂量的增加而减小，表明总剂量效应导致其信号传输特性的下降。根据模拟结果，减小硅通孔的高度、增加硅通孔半径、减小硅的长度和增加接地的硅通孔数量对提高互连结构的抗辐射性能有积极作用。原创性/价值本工作研究了辐射对三维封装互连结构传输特性的影响，并提出了硬化设计方法。这对于提高空间应用中三维封装的可靠性具有重要意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Microelectronics International 工程技术-材料科学：综合

CiteScore

1.90

自引率

9.10%

发文量

审稿时长

>12 weeks

期刊介绍： Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.