A. Muhammad, S. M. Mohammad, Z. Hassan, Suvindraj Rajamanickam, S. M. Abed, M. Ashiq
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引用次数: 3
Abstract
Purpose
The purpose of this study is to dope silver (Ag) and fluorine (F) in zinc oxide (ZnO) for the enhancement of electrical and optical properties of ZnO, as previous studies reported the improvement of these properties using individual doping of F and Ag. In this paper, F and Ag co-doped ZnO nanorods were synthesized using a modified hydrothermal method.
Design/methodology/approach
The hydrothermal method was modified and used for the synthesis of the doped ZnO nanostructures, where stainless autoclave and oven were replaced with the Duran laboratory bottle and water boiler system in the process. The ultraviolet metal-semiconductor-metal photodetector (PD) was fabricated using DC sputtering method.
Findings
Vertically aligned nanorods images were captured from field emission scanning electron microscopy. XPS analysis confirmed greater spin-orbital interaction in the F and Ag co-doped ZnO sample and revealed the presence of F, Ag, Zn and O in the samples, indicating a successful doping process. X-ray diffraction revealed a hexagonal wurtzite structure with enhanced crystal quality upon co-doping. The bandgap decreased from 3.19 to 3.14 eV upon co-doping because of reduced defects density in the sample. Finally, an ultra-violet PD was fabricated with enhanced sensitivity and response times upon co-doping.
Originality/value
The low-cost, less energy-consuming Duran laboratory bottle and water boiler system were used as the substitute of expensive, more energy-consuming stainless autoclave and oven in a hydrothermal method for synthesis of F and Ag co-doped ZnO and subsequent fabrication of PD.
期刊介绍:
Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details.
Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are:
• Advanced packaging
• Ceramics
• Chip attachment
• Chip on board (COB)
• Chip scale packaging
• Flexible substrates
• MEMS
• Micro-circuit technology
• Microelectronic materials
• Multichip modules (MCMs)
• Organic/polymer electronics
• Printed electronics
• Semiconductor technology
• Solid state sensors
• Thermal management
• Thick/thin film technology
• Wafer scale processing.