{"title":"Rapid ionization of Xe/Ar mixtures in nanosecond discharges exploiting post-pulse field reversals","authors":"H. Y. Kim, M. Gołkowski, V. Harid","doi":"10.1088/2516-1067/abf73f","DOIUrl":null,"url":null,"abstract":"Enhanced post-pulse electric field reversals of Ar, Xe, and XeAr mixture gases in capacitively coupled nanosecond discharges are investigated with Particle-In-Cell simulations in the context of maximizing electron density. The electric field reversal occurs at the falling edge of the voltage pulse and induces electron oscillatory movement in the plasma bulk region. The amplitude of field reversals is affected by driven voltage and the ratio of bulk length to gap distance. Exploiting the field reversal with a so called Plasma frequency dependent Square Wave (PSW) in an optimal gas mixture leads to the highest electron density. Specifically, for a 250 V PSW XeAr mixture case, the electron density is 2.2 times higher compared to a 1 kV DC pure Xe case even if the driven voltage is 4 times less than DC voltage. In 250 V PSW cases, XeAr mixture plasma has 1.2 times higher average electron density and 1.2 times electron temperature in the sheath region than a pure Xe plasma. With a narrower bulk region, the XeAr plasma has an enhanced field reversal and this leads to higher and faster growing electron density and electron temperature than a Xe plasma. For applications using Xe plasmas, XeAr mixture plasmas with PSW can be exploited for high electron density and temperature at reduced costs.","PeriodicalId":36295,"journal":{"name":"Plasma Research Express","volume":" ","pages":""},"PeriodicalIF":1.3000,"publicationDate":"2021-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasma Research Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2516-1067/abf73f","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ORTHOPEDICS","Score":null,"Total":0}
引用次数: 0
Abstract
Enhanced post-pulse electric field reversals of Ar, Xe, and XeAr mixture gases in capacitively coupled nanosecond discharges are investigated with Particle-In-Cell simulations in the context of maximizing electron density. The electric field reversal occurs at the falling edge of the voltage pulse and induces electron oscillatory movement in the plasma bulk region. The amplitude of field reversals is affected by driven voltage and the ratio of bulk length to gap distance. Exploiting the field reversal with a so called Plasma frequency dependent Square Wave (PSW) in an optimal gas mixture leads to the highest electron density. Specifically, for a 250 V PSW XeAr mixture case, the electron density is 2.2 times higher compared to a 1 kV DC pure Xe case even if the driven voltage is 4 times less than DC voltage. In 250 V PSW cases, XeAr mixture plasma has 1.2 times higher average electron density and 1.2 times electron temperature in the sheath region than a pure Xe plasma. With a narrower bulk region, the XeAr plasma has an enhanced field reversal and this leads to higher and faster growing electron density and electron temperature than a Xe plasma. For applications using Xe plasmas, XeAr mixture plasmas with PSW can be exploited for high electron density and temperature at reduced costs.
在最大化电子密度的情况下,利用粒子-电池模拟研究了Ar, Xe和XeAr混合气体在电容耦合纳秒放电中增强的脉冲后电场逆转。电场反转发生在电压脉冲的下降沿,引起等离子体体区电子振荡运动。磁场反转的幅值受驱动电压和体长与间隙距离之比的影响。利用所谓的等离子体频率相关方波(PSW)在最佳气体混合物中的场反转导致最高的电子密度。具体来说,对于250 V PSW XeAr混合情况,即使驱动电压比直流电压低4倍,电子密度也比1 kV直流纯Xe情况高2.2倍。在250 V PSW条件下,XeAr混合等离子体的平均电子密度是纯Xe等离子体的1.2倍,鞘区电子温度是纯Xe等离子体的1.2倍。由于XeAr等离子体的体区较窄,其场反转增强,导致电子密度和电子温度的增长比Xe等离子体更高更快。对于使用Xe等离子体的应用,XeAr混合等离子体与PSW可以以更低的成本获得更高的电子密度和温度。