Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2019-07-04 DOI:10.1155/2019/4578501
Zhaopeng Wei, G. Jacquemod, Y. Leduc, E. Foucauld, J. Prouvée, B. Blampey
{"title":"Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits","authors":"Zhaopeng Wei, G. Jacquemod, Y. Leduc, E. Foucauld, J. Prouvée, B. Blampey","doi":"10.1155/2019/4578501","DOIUrl":null,"url":null,"abstract":"Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to implement longer transistor, especially for analog cell. In this paper, we propose a new topology using some advantages of the FDSOI (Fully Depleted Silicon on Insulator) technology in order to reduce the size of analog cells. First, a current mirror was chosen to illustrate and validate a new design. Measured currents, with 35nm transistor length, have validated our new cross-coupled back-gate topology. Then, a VCRO (Voltage Controlled Ring Oscillator) based on complementary inverter is also used to remove passive components reducing the size of the circuit.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":" ","pages":""},"PeriodicalIF":1.3000,"publicationDate":"2019-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/4578501","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2019/4578501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 3

Abstract

Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to implement longer transistor, especially for analog cell. In this paper, we propose a new topology using some advantages of the FDSOI (Fully Depleted Silicon on Insulator) technology in order to reduce the size of analog cells. First, a current mirror was chosen to illustrate and validate a new design. Measured currents, with 35nm transistor length, have validated our new cross-coupled back-gate topology. Then, a VCRO (Voltage Controlled Ring Oscillator) based on complementary inverter is also used to remove passive components reducing the size of the circuit.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
减小晶体管的短通道效应和减小模拟电路的尺寸
模拟集成电路从不遵循摩尔定律。这对无源元件尤其适用。由于短通道效应,我们必须实现更长的晶体管,特别是模拟单元。在本文中,我们提出了一种新的拓扑结构,利用FDSOI(完全耗尽绝缘体上硅)技术的一些优点,以减少模拟单元的尺寸。首先,选择一个电流反射镜来说明和验证一个新的设计。35nm晶体管长度的测量电流验证了我们新的交叉耦合后门拓扑结构。然后,还采用了基于互补逆变器的VCRO(压控环振荡器)来去除无源元件,减小了电路的尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
期刊最新文献
Analysis and Design of High-Energy-Efficiency Amplifiers for Delta-Sigma Modulators An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1