S. Kovachov, I. Bogdanov, D. O. Pimenov, V. Bondarenko, A. A. Konovalenko, M. Skurska, I. Konovalenko, Y. Suchikova
{"title":"Chemical evaluation of the quality of nanostructures synthesized on the surface of indium phosphide","authors":"S. Kovachov, I. Bogdanov, D. O. Pimenov, V. Bondarenko, A. A. Konovalenko, M. Skurska, I. Konovalenko, Y. Suchikova","doi":"10.5604/01.3001.0015.3592","DOIUrl":null,"url":null,"abstract":"Purpose: The article proposes a methodology for determining the chemical quality criterion\nof porous layers synthesized on the surface of semiconductors, based on taking into account\nthe chemical parameters of the surface that can affect the properties of nanostructures.\nDesign/methodology/approach: The chemical quality criterion was evaluated in terms\nof stoichiometry, stability of structures over time, uniformity of distribution over the surface,\nand the presence of an oxide phase. As an example, a calculation is demonstrated for the\npor-InP/InP structure synthesized on a mono-InP surface. The results of calculating the\nchemical quality criterion were evaluated using the Harrington scale to rank samples by\nquality level.\nFindings: A chemical criterion for the quality of porous layers synthesized on the surface\nof semiconductors has been developed. This criterion contains a set of indicators sufficient\nfor a comprehensive assessment of the surface condition and is universal in nature. The\nstudies carried out make it possible to reasonably approach the determination of the modes\nof electrochemical processing of semiconductors and open up new perspectives in the\nconstruction of a model of self-organization of a porous structure.\nResearch limitations/implications: The chemical quality criterion does not allow\nevaluating the obtained nanostructures in terms of geometric parameters. Therefore, in\nthe future, there is a need to develop a morphological quality criterion and determine a\nmethodology for assessing a generalized quality criterion for nanostructures synthesized on\nthe surface of semiconductors, which may include economic, environmental, technological\nindicators, and the like.\nPractical implications: Study results are expedient from a practical point of view, since they\nmake it possible to reasonably approach the determination of the modes of electrochemical\nprocessing of semiconductors, synthesize nanostructures with predetermined properties,\nand create standard samples of nanomaterial composition.Originality/value: Methodology for assessing the quality of porous semiconductors by a\nchemical criterion has been applied for the first time in engineering science. The article will\nbe useful to engineers, who are engaged in the synthesis of nanostructures, researchers and\nscientists, as well as specialists in nanometrology.\n\n","PeriodicalId":8297,"journal":{"name":"Archives of materials science and engineering","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Archives of materials science and engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5604/01.3001.0015.3592","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Materials Science","Score":null,"Total":0}
引用次数: 1
Abstract
Purpose: The article proposes a methodology for determining the chemical quality criterion
of porous layers synthesized on the surface of semiconductors, based on taking into account
the chemical parameters of the surface that can affect the properties of nanostructures.
Design/methodology/approach: The chemical quality criterion was evaluated in terms
of stoichiometry, stability of structures over time, uniformity of distribution over the surface,
and the presence of an oxide phase. As an example, a calculation is demonstrated for the
por-InP/InP structure synthesized on a mono-InP surface. The results of calculating the
chemical quality criterion were evaluated using the Harrington scale to rank samples by
quality level.
Findings: A chemical criterion for the quality of porous layers synthesized on the surface
of semiconductors has been developed. This criterion contains a set of indicators sufficient
for a comprehensive assessment of the surface condition and is universal in nature. The
studies carried out make it possible to reasonably approach the determination of the modes
of electrochemical processing of semiconductors and open up new perspectives in the
construction of a model of self-organization of a porous structure.
Research limitations/implications: The chemical quality criterion does not allow
evaluating the obtained nanostructures in terms of geometric parameters. Therefore, in
the future, there is a need to develop a morphological quality criterion and determine a
methodology for assessing a generalized quality criterion for nanostructures synthesized on
the surface of semiconductors, which may include economic, environmental, technological
indicators, and the like.
Practical implications: Study results are expedient from a practical point of view, since they
make it possible to reasonably approach the determination of the modes of electrochemical
processing of semiconductors, synthesize nanostructures with predetermined properties,
and create standard samples of nanomaterial composition.Originality/value: Methodology for assessing the quality of porous semiconductors by a
chemical criterion has been applied for the first time in engineering science. The article will
be useful to engineers, who are engaged in the synthesis of nanostructures, researchers and
scientists, as well as specialists in nanometrology.
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