Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Abstract

The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers’ diffusion coefficient (D(ω, B), in the (p) base leads to maximum values (Dmax) at resonance frequencies (ωr). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, ωr and B, are then established, and will be data for industrial development of low-cost solar cells for specific use.