Improved energy storage property in polyvinylidene fluoride-based multilayered composite regulated by oriented carbon nanotube@SiO2 nanowires

IF 3.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IET Nanodielectrics Pub Date : 2023-03-02 DOI:10.1049/nde2.12045
Na Zhang, Hang Zhao, Chuying Zhang, Shuyan Gao, Tongguang Zhu, Jinbo Bai
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引用次数: 2

Abstract

High-performance dielectric capacitors are essential components of advanced electronic and pulsed power systems for energy storage. Because of their high breakdown strength and excellent flexibility, polymer-based capacitors are regarded as auspicious energy storage material. However, the energy storage capacity of polymer-based capacitors is severely limited due to their low polarisation and low dielectric permittivity. The modified Stöber method was used to construct two types of CNT@SiO2 (CS) one-dimensional core-shell structured nanowires with different shell thicknesses. By integrating the procedures of solution mixing, melt blending, hot-stretching orientation and hot pressing, sandwich-structured poly (vinylidene fluoride) (PVDF)-based composites were fabricated. The CS core-shell nanowires dispersed in the inter-layer serve as electron donors, leading to a high permittivity, while two PVDF outer layers provide the favourable overall breakdown strength. The insulating SiO2 shell can effectively limit the migration of carriers and keep the dielectric loss at a relatively low level in the composites. The CS/PVDF composite exhibited an enhanced discharged density (~6.1 J/cm3) and breakdown strength (~241 kV/mm) when the interlayer filled with as small as 1 wt% CS nanowires with the SiO2 shell thickness of 8 nm, which is 203% and 18.7 % higher than pure PVDF (~2.01 J/cm3 at 203 kV/mm), respectively. This research presents a practical strategy for designing and fabricating advanced polymer film capacitor energy storage devices.

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取向碳nanotube@SiO 2纳米线调控聚偏氟乙烯基多层复合材料的储能性能
高性能的介质电容器是先进的电子和脉冲电力系统的重要组成部分。聚合物基电容器由于其高击穿强度和优异的柔韧性,被认为是一种吉祥的储能材料。然而,聚合物基电容器的低极化和低介电常数严重限制了其储能能力。采用改进的Stöber方法构建了两种不同壳厚的CNT@SiO2 (CS)一维核壳结构纳米线。通过综合溶液混合、熔体共混、热拉伸定向和热压工艺,制备了三明治结构聚偏氟乙烯(PVDF)基复合材料。分散在中间层中的CS核壳纳米线作为电子供体,导致高介电常数,而两个PVDF外层提供有利的总体击穿强度。绝缘的SiO2外壳可以有效地限制载流子的迁移,使复合材料的介电损耗保持在较低的水平。CS/PVDF复合材料的放电密度(~6.1 J/cm3)和击穿强度(~241 kV/mm)均比纯PVDF (~2.01 J/cm3, 203 kV/mm)分别提高203%和18.7%。本研究为设计和制造先进的聚合物薄膜电容器储能装置提供了一种实用的策略。
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来源期刊
IET Nanodielectrics
IET Nanodielectrics Materials Science-Materials Chemistry
CiteScore
5.60
自引率
3.70%
发文量
7
审稿时长
21 weeks
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