Low-voltage Low-power Bulk-driven CMOS Op-Amp Using Negative Miller Compensation for ECG

IF 0.9 Q3 ENGINEERING, MULTIDISCIPLINARY Journal of Engineering and Technological Sciences Pub Date : 2022-09-15 DOI:10.5614/j.eng.technol.sci.2022.54.5.10

Muhaned Zaidi

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Abstract

Two bulk-driven CMOS (Complementary Metal Oxide Semiconductor) operational amplifier (op-amp) designs for electrocardiogram (ECG) application are presented and compared in this paper. Both op-amps are based on two-stage amplification, where bulk-driven differential input is the first stage, while additional DC gain is the second stage. Different compensation techniques were integrated in each op-amp design. Standard Miller compensation was used for the first op-amp parallel with the second stage. The novelty of the second op-amp is that it utilizes negative Miller compensation between the bulk-driven input node and the output node of the first stag, while standard Miller compensation was used in the second stage. The purpose of this work was to compare DC gain, phase margin (PM) and unit gain frequency (UGF) obtained through different simulated compensation strategies and test results. The op-amps were simulated using 0.25 μm CMOS technology. The simulation results are presented using the standard model libraries from Tanner EDA tools, operating on a single rail +0.8V power supply.

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基于负米勒补偿的低电压低功耗CMOS运放

本文介绍并比较了两种适用于心电图应用的体驱动CMOS（互补金属氧化物半导体）运算放大器的设计。两个运算放大器都基于两级放大，其中体驱动差分输入是第一级，而附加直流增益是第二级。在每个运算放大器的设计中集成了不同的补偿技术。标准米勒补偿用于与第二级并联的第一运算放大器。第二运算放大器的新颖性在于，它在第一级的体驱动输入节点和输出节点之间使用负米勒补偿，而在第二级中使用标准米勒补偿。本工作的目的是比较通过不同的模拟补偿策略和测试结果获得的直流增益、相位裕度和单位增益频率。使用0.25μm CMOS技术模拟运算放大器。仿真结果使用Tanner EDA工具的标准模型库，在单轨+0.8V电源上运行。

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来源期刊

Journal of Engineering and Technological Sciences ENGINEERING, MULTIDISCIPLINARY-

CiteScore

2.30

自引率

11.10%

发文量

审稿时长

24 weeks

期刊介绍： Journal of Engineering and Technological Sciences welcomes full research articles in the area of Engineering Sciences from the following subject areas: Aerospace Engineering, Biotechnology, Chemical Engineering, Civil Engineering, Electrical Engineering, Engineering Physics, Environmental Engineering, Industrial Engineering, Information Engineering, Mechanical Engineering, Material Science and Engineering, Manufacturing Processes, Microelectronics, Mining Engineering, Petroleum Engineering, and other application of physical, biological, chemical and mathematical sciences in engineering. Authors are invited to submit articles that have not been published previously and are not under consideration elsewhere.