Design of Low Power Temperature Sensor Based on 180 nm Complementary Metal Oxide Semiconductor Technology

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Nanoelectronics and Optoelectronics Pub Date : 2023-05-01 DOI:10.1166/jno.2023.3422
Wenbin Liang, Zhenzhen Luo, Xian Yu, Xiaoyan Chen
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Abstract

CMOS temperature sensor is widely used in power monitoring system, power consumption is an important index. The digital filter power consumption is one of the main sources of the temperature sensor power consumption, and limiting the Digital filter power consumption becomes an important method to realize the low power consumption of the temperature sensor. Based on this, a low power digital filter for CMOS temperature sensors is designed, and a precision adaptive digital filter is proposed, the filter is cascaded by a recursive CIC filter and a FIR filter based on a shift adder, the order of CIC filter and FIR filter can be adjusted according to the difference between the measured temperature and the threshold temperature range set by the user, when the measured temperature is outside the threshold temperature range, the operation unit in the filter is selectively switched off, which makes the power consumption of the filter decrease. For the temperature range that does not need to be monitored, the requirement of temperature measurement accuracy is usually not high, if high-precision temperature monitoring is still carried out, it will have a lot of unnecessary power consumption, in this paper, an adaptive precision digital filter is used to solve the problem. In order to further reduce the power consumption of the temperature sensor, according to the characteristics of the slow change of the temperature signal, a single temperature conversion combined with idle off mode is adopted, the FIR filter power consumption is reduced by 5.5% by optimizing the single temperature conversion operation. The temperature sensor is realized by 180 nm CMOS process. The results show that the sensor can achieve an accuracy of 0.47 °C in the temperature range of −55–115 °C when the measured temperature is in the threshold temperature range, under 1.8 V supply voltage, the power consumption of the digital part of the sensor is 20.15 μw. When the measured temperature is outside the threshold temperature range, the power consumption of the digital part of the sensor can be reduced by 11.3%.
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基于180nm互补金属氧化物半导体技术的低功耗温度传感器设计
CMOS温度传感器广泛应用于电力监控系统中,功耗是一个重要指标。数字滤波器功耗是温度传感器功耗的主要来源之一,限制数字滤波器功耗成为实现温度传感器低功耗的重要方法。在此基础上,设计了一种用于CMOS温度传感器的低功耗数字滤波器,并提出了一种精度自适应数字滤波器,该滤波器由递归CIC滤波器和基于移位加法器的FIR滤波器级联,CIC滤波器和FIR滤波器的阶数可以根据测量温度与用户设置的阈值温度范围之间的差异进行调整,当测量的温度在阈值温度范围之外时,滤波器中的操作单元被选择性地关闭,这使得滤波器的功耗降低。对于不需要监测的温度范围,通常对温度测量精度的要求不高,如果仍然进行高精度的温度监测,会有很多不必要的功耗,本文采用自适应精度数字滤波器来解决这个问题。为了进一步降低温度传感器的功耗,根据温度信号变化缓慢的特点,采用了单次温度转换与怠速关闭模式相结合的方式,通过优化单次温度变换操作,FIR滤波器功耗降低了5.5%。温度传感器采用180nm CMOS工艺实现。结果表明,当测量温度在阈值温度范围内时,传感器在−55–115°C的温度范围内可以达到0.47°C的精度,在1.8V电源电压下,传感器数字部分的功耗为20.15μw。当测量的温度在阈值温度范围之外时,传感器数字部分的功耗可以降低11.3%。
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来源期刊
Journal of Nanoelectronics and Optoelectronics
Journal of Nanoelectronics and Optoelectronics 工程技术-工程:电子与电气
自引率
16.70%
发文量
48
审稿时长
12.5 months
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