Electronic properties of 2D materials and their junctions

Abstract

With an extensive range of distinctive features at nano meter-scale thicknesses, two-dimensional (2D) materials drawn the attention of the scientific community. Despite tremendous advancements in exploratory research on 2D materials, knowledge of 2D electrical transport and carrier dynamics still in its infancy. Thus, here we highlighted the electrical characteristics of 2D materials with electronic band structure, electronic transport, dielectric constant, carriers mobility. The atomic thinness of 2D materials makes substantially scaled field-effect transistors (FETs) with reduced short-channel effects conceivable, even though strong carrier mobility required for high performance, low-voltage device operations. We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications. Presently, Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure. 2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors. We also, describe the numerous 2D p-n junctions, such as homo junction and hetero junction including mixed dimensional junctions. Finally, we talked about the problems and potential for the future.