{"title":"Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield","authors":"Haifeng Mo, Yaohui Zhang, Helun Song","doi":"10.1155/2019/1928494","DOIUrl":null,"url":null,"abstract":"LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-field distribution on drain side for robustness as well. Design trade off of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2019 1","pages":"1-8"},"PeriodicalIF":1.3000,"publicationDate":"2019-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/1928494","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2019/1928494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-field distribution on drain side for robustness as well. Design trade off of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data.
期刊介绍：
Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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