{"title":"Fabrication and characterization of field-effect transistors based on MoS2 nanotubes prepared in anodic aluminum oxide templates","authors":"Naoya Shiraiwa , Kyosuke Murata , Takuto Nakazawa , Akihiro Fukawa , Koichi Takase , Takeshi Ito , Shoso Shingubara , Tomohiro Shimizu","doi":"10.1016/j.mne.2023.100200","DOIUrl":null,"url":null,"abstract":"<div><p>Field-effect transistors (FETs) based on MoS<sub>2</sub> nanotubes prepared in anodic aluminum oxide (AAO) templates have been fabricated and demonstrated in this work. MoS<sub>2</sub> nanotubes were prepared by the thermal decomposition of (NH<sub>4</sub>)<sub>2</sub>MoS<sub>4</sub> precursors in the AAO template. The diameter of the MoS<sub>2</sub> nanotubes was approximately 80 nm, which corresponded to the size of the AAO template. Schottky-type FETs were prepared with Au and Pt electrodes, and the FETs exhibited n-type behavior, with on/off ratios that exceeded 10<sup>3</sup> at <em>V</em><sub><em>SD</em></sub> = 0.5 V.</p></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"19 ","pages":"Article 100200"},"PeriodicalIF":2.8000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nano Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590007223000308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Field-effect transistors (FETs) based on MoS2 nanotubes prepared in anodic aluminum oxide (AAO) templates have been fabricated and demonstrated in this work. MoS2 nanotubes were prepared by the thermal decomposition of (NH4)2MoS4 precursors in the AAO template. The diameter of the MoS2 nanotubes was approximately 80 nm, which corresponded to the size of the AAO template. Schottky-type FETs were prepared with Au and Pt electrodes, and the FETs exhibited n-type behavior, with on/off ratios that exceeded 103 at VSD = 0.5 V.
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