Preparation of V2O5 Thin Film by Sol–Gel Technique and Pen Plotter Printing

IF 3.2 Q3 CHEMISTRY, PHYSICAL Colloids and Interfaces Pub Date : 2023-03-15 DOI:10.3390/colloids7010020
Philipp Yu. Gorobtsov, T. Simonenko, N. Simonenko, E. Simonenko, N. Kuznetsov
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Abstract

The work is dedicated to study of thin V2O5 film formation by pen plotter printing using vanadyl alkoxyacetylacetonate as hydrolytically active precursor. Solution of the prepared vanadyl butoxyacetylacetonate complex with 87% of butoxyl groups was used as functional ink for pen plotter printing of thin V2O5 film on surface of specialized chip. According to atomic force microscopy (AFM) and scanning electron microscopy (SEM), oxide film consists of nanorods 35–75 nm in thickness and 120–285 nm in length, with crystallite size of 54 ± 4 nm. Data from Rietveld refinement of the X-ray powder diffraction results and work function value (4.54 eV) indicate high content of defects (such as oxygen vacancies) in the material. Electrophysical properties study suggests that correlated barrier hopping of the charge carriers is the main conductivity mechanism. Conductivity activation energy Ea was found to be 0.24 eV.
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溶胶-凝胶法制备V2O5薄膜及笔式绘图机印刷
本文研究了以乙酰丙酮钒基为水解活性前驱体,用笔式绘图仪印刷形成V2O5薄膜的方法。将制备的含87%丁氧基的钒基乙酰丙酮配合物溶液作为功能墨水,用于专用芯片表面V2O5薄膜的钢笔绘图仪印刷。原子力显微镜(AFM)和扫描电镜(SEM)观察发现,氧化膜由厚度为35 ~ 75 nm、长度为120 ~ 285 nm的纳米棒组成,晶粒尺寸为54±4 nm。x射线粉末衍射结果的Rietveld细化数据和功函数值(4.54 eV)表明材料中含有高含量的缺陷(如氧空位)。电物理性质研究表明,载流子的相关势垒跳变是主要的导电机制。电导率活化能Ea为0.24 eV。
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来源期刊
Colloids and Interfaces
Colloids and Interfaces CHEMISTRY, PHYSICAL-
CiteScore
3.90
自引率
4.20%
发文量
64
审稿时长
10 weeks
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