Reflective-to-absorptive THz switchable bifunctionality through phase transition of vanadium dioxide in a 1D defective photonic crystal microcavity

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2023-01-10 DOI:10.1007/s10825-023-02010-2
Arezou Rashidi
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Abstract

The terahertz (THz) absorption features are theoretically investigated in a symmetric one-dimensional photonic crystal hybridized with a vanadium dioxide (VO2) phase change material (PCM). VO2 is one of the most prominent PCMs whose conductivity increases three orders of magnitude during its phase transition from a semiconducting monoclinic to a metallic tetragonal structure. Here, we utilize this property of VO2 to engineer a tunable THz optical device. Our results show that when the VO2 is in the semiconductor state with low conductivity of 200 S/m, the structure is nearly reflective. However, increasing the VO2 conductivity continuously to the value of 1.5 × 105 S/m increases its metallic level further leading to the perfect absorption of the structure. Further increasing the VO2 conductivity to the value of 2 × 105 S/m reconfigures it to the fully metallic state so that the absorption peak value remains unit as well. In other words, there is a unit contrast in the absorption levels between two semiconductor and metallic states of VO2 for the proposed structure, which makes it promising for designing tunable nearly reflective and absorbent bifunctionality and optical switching THz devices.

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一维缺陷光子晶体微腔中二氧化钒相变的反射-吸收太赫兹可切换双功能
研究了与二氧化钒(VO2)相变材料(PCM)杂化的一维对称光子晶体的太赫兹(THz)吸收特性。VO2是最突出的PCMs之一,其电导率在其从半导体单斜向金属四方结构的相变过程中增加了三个数量级。在这里,我们利用VO2的这一特性来设计一个可调谐的太赫兹光学器件。结果表明,当VO2处于200 S/m低电导率的半导体状态时,其结构几乎是反射的。然而,持续增加VO2电导率至1.5 × 105 S/m,进一步提高了其金属水平,导致结构的完美吸收。进一步增加VO2电导率至2 × 105 S/m,使其重新配置为全金属状态,从而吸收峰值也保持单位。换句话说,对于所提出的结构,VO2的两种半导体和金属状态之间的吸收水平存在单位对比,这使得它有望设计可调谐的近反射和吸收双功能和光开关太赫兹器件。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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