An efficient design of dual-axis MEMS accelerometer considering microfabrication process limitations and operating environment variations

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics International Pub Date : 2021-08-17 DOI:10.1108/mi-02-2021-0023
Muhammad Ahmad Raza Tahir, M. M. Saleem, Syed Ali Asadullah Bukhari, Amir Hamza, R. I. Shakoor
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引用次数: 2

Abstract

PurposeThis paper aims to present an efficient design approach for the micro electromechanical systems (MEMS) accelerometers considering design parameters affecting the long-term reliability of these inertial sensors in comparison to traditional iterative microfabrication and experimental characterization approach. Design/methodology/approachA dual-axis capacitive MEMS accelerometer design is presented considering the microfabrication process constraints of the foundry process. The performance of the MEMS accelerometer is analyzed through finite element method– based simulations considering main design parameters affecting the long-term reliability. The effect of microfabrication process induced residual stress, operating pressure variations in the range of 10 mTorr to atmospheric pressure, thermal variations in the operating temperature range of −40°C to 100°C and impulsive input acceleration at different input frequency values is presented in detail. FindingsThe effect of residual stress is negligible on performance of the MEMS accelerometer due to efficient design of mechanical suspension beams. The effect of operating temperature and pressure variations is negligible on energy loss factor. The thermal strain at high temperature causes the sensing plates to deform out of plane. The input dynamic acceleration range is 34 g at room temperature, which decreases with operating temperature variations. At low frequency input acceleration, the input acts as a quasi-static load, whereas at high frequency, it acts as a dynamic load for the MEMS accelerometer. Originality/valueIn comparison with the traditional MEMS accelerometer design approaches, the proposed design approach focuses on the analysis of critical design parameters that affect the long-term reliability of MEMS accelerometer.
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考虑微加工工艺限制和操作环境变化的双轴MEMS加速度计的高效设计
目的本文旨在提出一种有效的微机电系统加速度计设计方法,与传统的迭代微制造和实验表征方法相比,该方法考虑了影响这些惯性传感器长期可靠性的设计参数。设计/方法/方法考虑到铸造工艺的微制造工艺限制,提出了双轴电容式MEMS加速度计的设计。考虑到影响长期可靠性的主要设计参数,通过基于有限元法的仿真分析了MEMS加速度计的性能。详细介绍了微加工过程引起的残余应力、10毫托至大气压范围内的工作压力变化、−40°C至100°C工作温度范围内的热变化以及不同输入频率值下的脉冲输入加速度的影响。由于机械悬臂梁的有效设计,残余应力对MEMS加速度计性能的影响可以忽略不计。工作温度和压力变化对能量损失因子的影响可以忽略不计。高温下的热应变导致传感板变形出平面。输入动态加速度范围为34 g,其随着操作温度的变化而减小。在低频输入加速度下,输入充当准静态负载,而在高频下,它充当MEMS加速度计的动态负载。独创性/价值与传统的MEMS加速度计设计方法相比,所提出的设计方法侧重于分析影响MEMS加速度计长期可靠性的关键设计参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
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