A chemosensitive based ammonia gas sensor with PANI/PEO- ZnO nanofiber composites sensing layer

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics International Pub Date : 2023-03-07 DOI:10.1108/mi-09-2022-0161
Gözde Konuk Ege, Ö. Akay, H. Yüce
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Abstract

Purpose The purpose of this study is to investigate the ammonia sensing performance of polyaniline/polyethylene oxide (PANI/PEO) and polyaniline/polyethylene oxide/zinc oxide (PANI/PEO-ZnO) composite nanofibers at room temperature. Design/methodology/approach Gas sensor structures were fabricated using micro-fabrication techniques. First, onto the SiO2 wafer, gold electrodes were fabricated via thermal evaporation. PANI/PEO nanofibers were produced by the electrospinning method and the ZnO layer was deposited by RF magnetron sputtering on the electrospun nanofibers as a sensing layer. Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM) were performed for characterization analysis of nanofibers. After all, gas sensing analysis of PANI/PEO and PANI/PEO/ZnO nanofibers was performed using an experimental setup at room temperature conditions. Findings FTIR analysis confirms the presence of functional groups of PANI, PEO and ZnO in nanofiber structure. SEM images demonstrate beads-free, thinner and smooth nanofibers with ZnO contribution to electrospun PANI/PEO nanofibers. Moreover, according to the gas sensing results, the PANI/PEO nanofibers exhibit 115 and 457 s response time and recovery time, respectively. However, the PANI/PEO/ZnO nanofibers exhibit 245 and 153 s response time and recovery time, respectively. Originality/value In this study, ZnO was deposited via RF magnetron sputtering techniques on PANI/PEO nanofibers as a different approach instead of in situ polymerization, to investigate and enhance the sensor response and recovery time of the PANI/PEO/ZnO and PANI/PEO composite nanofibers to ammonia. These results indicated that ZnO can enhance the sensing properties of conductive polymer based resistive sensors.
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PANI/PEO-ZnO纳米纤维复合传感层化学敏感型氨气传感器
目的研究聚苯胺/聚环氧乙烷(PANI/PEO)和聚苯胺/聚氧化乙烯/氧化锌(PANI/PEO-ZnO)复合纳米纤维在室温下的氨敏性能。设计/方法/方法使用微制造技术制造气体传感器结构。首先,在SiO2晶片上,通过热蒸发制备金电极。采用静电纺丝方法制备了PANI/PEO纳米纤维,并通过射频磁控溅射在静电纺丝纳米纤维上沉积了ZnO层作为传感层。采用傅立叶变换红外光谱(FTIR)和扫描电子显微镜(SEM)对纳米纤维进行了表征分析。毕竟,PANI/PEO和PANI/PEO/ZnO纳米纤维的气敏分析是在室温条件下使用实验装置进行的。FTIR分析证实了PANI、PEO和ZnO在纳米纤维结构中存在官能团。SEM图像显示了无珠、更薄和光滑的纳米纤维,ZnO对电纺PANI/PEO纳米纤维的贡献。此外,根据气体传感结果,PANI/PEO纳米纤维表现出115和457 s的响应时间和恢复时间。然而,PANI/PEO/ZnO纳米纤维表现出245 和153 s的响应时间和恢复时间。原创性/价值在本研究中,通过RF磁控溅射技术在PANI/PEO纳米纤维上沉积ZnO,作为一种不同的方法,而不是原位聚合,以研究和提高PANI/PEO/ZnO和PANI/PEO复合纳米纤维对氨的传感器响应和恢复时间。这些结果表明,ZnO可以提高基于导电聚合物的电阻传感器的传感性能。
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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
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