0.4 V Active Biased LNA for 2.4 GHz Low Energy RF Receivers

Giovana Ceolin, Lucas Compassi Severo
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引用次数: 1

Abstract

To meet low power requirements for Internet of Things (IoT) applications, the power dissipation of RF transceivers must be very low. As the Low Noise Amplifier (LNA) is one of the most energy consuming parts of an RF receiver, its power optimization is necessary for modern IoT devices. This work presents a 170 $\mu$W LNA capable of operating at 2.4 GHz when powered by a 0.4 V source. It is based on an inverter-based amplifier with improved gate bias voltage and automatic forward bulk biasing to operate at the moderated channel inversion level. A biasing metric is explored to analyze the best dimensions and bulk bias voltages for the NMOS transistor. Post-layout simulation results shown a 2.8 dB noise and competitive specification values compared to the state-of-the-art low-voltage LNAs.
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用于2.4 GHz低能量RF接收机的0.4 V有源偏置LNA
为了满足物联网(IoT)应用的低功耗要求,射频收发器的功耗必须非常低。由于低噪声放大器(LNA)是射频接收器中最耗能的部分之一,因此对现代物联网设备进行功率优化是必要的。这项工作提出了一个170 $\mu$W的LNA,当由0.4 V电源供电时,能够工作在2.4 GHz。它基于一个基于逆变器的放大器,具有改进的门偏置电压和自动正向体偏置,以在调制通道反转电平上工作。探讨了一种偏置度量来分析NMOS晶体管的最佳尺寸和体偏置电压。布局后仿真结果显示,与最先进的低压lna相比,噪声为2.8 dB,规格值具有竞争力。
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来源期刊
Journal of Integrated Circuits and Systems
Journal of Integrated Circuits and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.90
自引率
0.00%
发文量
39
期刊介绍: This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.
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