Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects

Abstract

Two-dimensional materials promise excellent gate control and high drive currents at the ultimate scaling limit. However, numerous challenges must be overcome before silicon can potentially be replaced as the predominant channel material. For example, defects in two-dimensional materials and their vicinity pose a considerable challenge, as they have a sizable impact on the performance of such ultra-scaled devices.For enabling the transition from single lab-based devices to highly-integrated structures at an industrial scale, predictive modeling tools are required for devices based on two-dimensional semiconductors. Moreover, models for transport in nanoelectronic devices need to be efficiently coupled to physical defect models. This article presents multi-scale models for transport and defect simulations, linking them wherever possible. Based on the latest insights, important research questions for future studies are identified.