Trimmable bandgap reference circuit with exponential curvature compensation

Hong-Zhuan Chen , Fei Chu , Wen-Tao Lu , Tie-Liang Zhang , Wen-Chang Li , Wei Gao
{"title":"Trimmable bandgap reference circuit with exponential curvature compensation","authors":"Hong-Zhuan Chen ,&nbsp;Fei Chu ,&nbsp;Wen-Tao Lu ,&nbsp;Tie-Liang Zhang ,&nbsp;Wen-Chang Li ,&nbsp;Wei Gao","doi":"10.1016/j.jnlest.2023.100216","DOIUrl":null,"url":null,"abstract":"<div><p>This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gain <em>β</em> of the bipolar junction transistor (BJT) and the temperature as well as reduce the influence of resistance-temperature dependency. Considering the degraded circuit performance caused by the process deviation, the trimmable module of the temperature coefficient (TC) is introduced to improve the circuit stability. The circuit has the advantages of simple structure, high linear stability, high TC accuracy, and trimmable TC. It consumes an area of 0.09 ​mm<sup>2</sup> when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor (CMOS) process. The proposed circuit achieves the simulated power supply rejection (PSR) of about −78.7 ​dB@1 ​kHz, the measured TC of ∼4.7 ​ppm/°C over a wide temperature range from −55 ​°C to 125 ​°C with the 2.5-V single-supply voltage, and the tested line regulation of 0.10 ​mV/V. Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.</p></div>","PeriodicalId":53467,"journal":{"name":"Journal of Electronic Science and Technology","volume":"21 3","pages":"Article 100216"},"PeriodicalIF":0.0000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Science and Technology","FirstCategoryId":"95","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1674862X23000344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Engineering","Score":null,"Total":0}
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Abstract

This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gain β of the bipolar junction transistor (BJT) and the temperature as well as reduce the influence of resistance-temperature dependency. Considering the degraded circuit performance caused by the process deviation, the trimmable module of the temperature coefficient (TC) is introduced to improve the circuit stability. The circuit has the advantages of simple structure, high linear stability, high TC accuracy, and trimmable TC. It consumes an area of 0.09 ​mm2 when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor (CMOS) process. The proposed circuit achieves the simulated power supply rejection (PSR) of about −78.7 ​dB@1 ​kHz, the measured TC of ∼4.7 ​ppm/°C over a wide temperature range from −55 ​°C to 125 ​°C with the 2.5-V single-supply voltage, and the tested line regulation of 0.10 ​mV/V. Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.

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带指数曲率补偿的可调带隙参考电路
本文提出了一种改进的指数曲率补偿带隙参考电路,利用双极结晶体管(BJT)的电流增益β与温度之间的指数关系,降低电阻-温度依赖性的影响。考虑到工艺偏差对电路性能的影响,引入了温度系数可调模块来提高电路的稳定性。该电路具有结构简单、线性稳定性高、TC精度高、TC可调等优点。如果采用0.25 μm的互补金属氧化物半导体(CMOS)工艺制作,其面积仅为0.09 mm2。该电路实现了模拟电源抑制(PSR)约为- 78.7 dB@1 kHz,在- 55°C至125°C的宽温度范围内,在2.5 V单电源电压下,测量到的TC为~ 4.7 ppm/°C,测试线路调节为0.10 mV/V。这种高性能带隙参考电路可以广泛应用于高精度、高可靠性的电子系统中。
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来源期刊
Journal of Electronic Science and Technology
Journal of Electronic Science and Technology Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
0.00%
发文量
1362
审稿时长
99 days
期刊介绍: JEST (International) covers the state-of-the-art achievements in electronic science and technology, including the most highlight areas: ¨ Communication Technology ¨ Computer Science and Information Technology ¨ Information and Network Security ¨ Bioelectronics and Biomedicine ¨ Neural Networks and Intelligent Systems ¨ Electronic Systems and Array Processing ¨ Optoelectronic and Photonic Technologies ¨ Electronic Materials and Devices ¨ Sensing and Measurement ¨ Signal Processing and Image Processing JEST (International) is dedicated to building an open, high-level academic journal supported by researchers, professionals, and academicians. The Journal has been fully indexed by Ei INSPEC and has published, with great honor, the contributions from more than 20 countries and regions in the world.
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