{"title":"Implementation of direct current to direct current converter exploiting power amplifier","authors":"Aissatou Hamadou","doi":"10.21833/aeee.2020.03.001","DOIUrl":null,"url":null,"abstract":"In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT device and the power added efficiency of 64% after getting optimization of matching network and the gain is 14.4 dBm.","PeriodicalId":32861,"journal":{"name":"Annals of Electrical and Electronic Engineering","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Annals of Electrical and Electronic Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21833/aeee.2020.03.001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In the last years, RF power amplifiers are taking advantage of the switched dc-dc converters to use them in several architectures that may improve the efficiency of the amplifier, keeping good linearity. In this study a DC-DC power converter design suitable for high-frequency applications by using a class E power amplifier (Inverter), instead of using small battery values choosing Radio Frequency (RF) values and getting high efficiency of output voltage and a maximum of current and voltage values between 0-9 mW of power input in rectifier, the class E power amplifier designed by using GaN HEMT device and the power added efficiency of 64% after getting optimization of matching network and the gain is 14.4 dBm.
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