Modeling Grain Boundaries in Polycrystalline Halide Perovskite Solar Cells

IF 14.3 1区 物理与天体物理 Q1 PHYSICS, CONDENSED MATTER Annual Review of Condensed Matter Physics Pub Date : 2020-04-09 DOI:10.1146/annurev-conmatphys-042020-025347
Ji-Sang Park, A. Walsh
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引用次数: 19

Abstract

Solar cells are semiconductor devices that generate electricity through charge generation upon illumination. For optimal device efficiency, the photogenerated carriers must reach the electrical contact layers before they recombine. A deep understanding of the recombination process and transport behavior is essential to design better devices. Halide perovskite solar cells are commonly made of a polycrystalline absorber layer, but there is no consensus on the nature and role of grain boundaries. This review concerns theoretical approaches for the investigation of extended defects. We introduce recent computational studies on grain boundaries, and their influence on point-defect distributions, in halide perovskite solar cells. We conclude with a discussion of future research directions.
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多晶卤化物钙钛矿太阳能电池的晶界模拟
太阳能电池是一种半导体装置,在光照下通过电荷产生电能。为了获得最佳的器件效率,光产生的载流子必须在重新组合之前到达电接触层。对复合过程和输运行为的深刻理解对于设计更好的器件是必不可少的。卤化物钙钛矿太阳能电池通常由多晶吸收层制成,但对晶界的性质和作用尚未达成共识。本文综述了研究扩展缺陷的理论方法。我们介绍了最近在卤化物钙钛矿太阳能电池中晶界的计算研究及其对点缺陷分布的影响。最后,对未来的研究方向进行了展望。
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来源期刊
Annual Review of Condensed Matter Physics
Annual Review of Condensed Matter Physics PHYSICS, CONDENSED MATTER-
CiteScore
47.40
自引率
0.90%
发文量
27
期刊介绍: Since its inception in 2010, the Annual Review of Condensed Matter Physics has been chronicling significant advancements in the field and its related subjects. By highlighting recent developments and offering critical evaluations, the journal actively contributes to the ongoing discourse in condensed matter physics. The latest volume of the journal has transitioned from gated access to open access, facilitated by Annual Reviews' Subscribe to Open initiative. Under this program, all articles are now published under a CC BY license, ensuring broader accessibility and dissemination of knowledge.
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