Harnessing defects for high-performance MoS2 tunneling field-effect transistors

IF 8.6 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Research Letters Pub Date : 2022-11-16 DOI:10.1080/21663831.2022.2145921
Juan Lyu, J. Gong, Huanglong Li
{"title":"Harnessing defects for high-performance MoS2 tunneling field-effect transistors","authors":"Juan Lyu, J. Gong, Huanglong Li","doi":"10.1080/21663831.2022.2145921","DOIUrl":null,"url":null,"abstract":"ABSTRACT The two-dimensional (2D) materials-based tunneling field-effect transistors (TFETs) suffer from low driving currents. In contrast to the prevailing wisdom that defects are detrimental, we proposed to harness the ubiquitous defects in MoS2 to overcome the problem of the low on-state current in TFET. The existence of certain molybdenum-related vacancies and sulfur vacancy in appropriate positions confers the higher driving currents without compromising the low-power benefits. Such performance enhancements are related to the defect-assisted resonant Zener tunneling mechanism introduced by the mid-gap states of the vacancy defects. These unveiled hidden defect benefits could provide new opportunities for boosting the performance of 2D TFETs. GRAPHICAL ABSTRACT IMPACT STATEMENT The defect-assisted resonant Zener tunneling mechanism in TFET introduced by the mid-gap states of the vacancies in MoS2 is beneficial for enhancing the on-state current.","PeriodicalId":18291,"journal":{"name":"Materials Research Letters","volume":"11 1","pages":"266 - 273"},"PeriodicalIF":8.6000,"publicationDate":"2022-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Research Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1080/21663831.2022.2145921","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

ABSTRACT The two-dimensional (2D) materials-based tunneling field-effect transistors (TFETs) suffer from low driving currents. In contrast to the prevailing wisdom that defects are detrimental, we proposed to harness the ubiquitous defects in MoS2 to overcome the problem of the low on-state current in TFET. The existence of certain molybdenum-related vacancies and sulfur vacancy in appropriate positions confers the higher driving currents without compromising the low-power benefits. Such performance enhancements are related to the defect-assisted resonant Zener tunneling mechanism introduced by the mid-gap states of the vacancy defects. These unveiled hidden defect benefits could provide new opportunities for boosting the performance of 2D TFETs. GRAPHICAL ABSTRACT IMPACT STATEMENT The defect-assisted resonant Zener tunneling mechanism in TFET introduced by the mid-gap states of the vacancies in MoS2 is beneficial for enhancing the on-state current.
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高性能二硫化钼隧道场效应晶体管的缺陷治理
摘要基于二维(2D)材料的隧穿场效应晶体管(TFET)的驱动电流较低。与缺陷有害的普遍观点相反,我们提出利用MoS2中普遍存在的缺陷来克服TFET中低导通电流的问题。某些钼相关空位和硫空位在适当位置的存在赋予了更高的驱动电流,而不损害低功率效益。这种性能增强与空位缺陷的中间间隙状态引入的缺陷辅助谐振齐纳隧穿机制有关。这些公开的隐藏缺陷优势可能为提高2D TFET的性能提供新的机会。图形摘要影响声明MoS2中空位的中隙态引入的TFET中的缺陷辅助谐振齐纳隧穿机制有利于增强导通电流。
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来源期刊
Materials Research Letters
Materials Research Letters Materials Science-General Materials Science
CiteScore
12.10
自引率
3.60%
发文量
98
审稿时长
3.3 months
期刊介绍: Materials Research Letters is a high impact, open access journal that focuses on the engineering and technology of materials, materials physics and chemistry, and novel and emergent materials. It supports the materials research community by publishing original and compelling research work. The journal provides fast communications on cutting-edge materials research findings, with a primary focus on advanced metallic materials and physical metallurgy. It also considers other materials such as intermetallics, ceramics, and nanocomposites. Materials Research Letters publishes papers with significant breakthroughs in materials science, including research on unprecedented mechanical and functional properties, mechanisms for processing and formation of novel microstructures (including nanostructures, heterostructures, and hierarchical structures), and the mechanisms, physics, and chemistry responsible for the observed mechanical and functional behaviors of advanced materials. The journal accepts original research articles, original letters, perspective pieces presenting provocative and visionary opinions and views, and brief overviews of critical issues.
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