{"title":"Harnessing defects for high-performance MoS2 tunneling field-effect transistors","authors":"Juan Lyu, J. Gong, Huanglong Li","doi":"10.1080/21663831.2022.2145921","DOIUrl":null,"url":null,"abstract":"ABSTRACT The two-dimensional (2D) materials-based tunneling field-effect transistors (TFETs) suffer from low driving currents. In contrast to the prevailing wisdom that defects are detrimental, we proposed to harness the ubiquitous defects in MoS2 to overcome the problem of the low on-state current in TFET. The existence of certain molybdenum-related vacancies and sulfur vacancy in appropriate positions confers the higher driving currents without compromising the low-power benefits. Such performance enhancements are related to the defect-assisted resonant Zener tunneling mechanism introduced by the mid-gap states of the vacancy defects. These unveiled hidden defect benefits could provide new opportunities for boosting the performance of 2D TFETs. GRAPHICAL ABSTRACT IMPACT STATEMENT The defect-assisted resonant Zener tunneling mechanism in TFET introduced by the mid-gap states of the vacancies in MoS2 is beneficial for enhancing the on-state current.","PeriodicalId":18291,"journal":{"name":"Materials Research Letters","volume":"11 1","pages":"266 - 273"},"PeriodicalIF":8.6000,"publicationDate":"2022-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Research Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1080/21663831.2022.2145921","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
ABSTRACT The two-dimensional (2D) materials-based tunneling field-effect transistors (TFETs) suffer from low driving currents. In contrast to the prevailing wisdom that defects are detrimental, we proposed to harness the ubiquitous defects in MoS2 to overcome the problem of the low on-state current in TFET. The existence of certain molybdenum-related vacancies and sulfur vacancy in appropriate positions confers the higher driving currents without compromising the low-power benefits. Such performance enhancements are related to the defect-assisted resonant Zener tunneling mechanism introduced by the mid-gap states of the vacancy defects. These unveiled hidden defect benefits could provide new opportunities for boosting the performance of 2D TFETs. GRAPHICAL ABSTRACT IMPACT STATEMENT The defect-assisted resonant Zener tunneling mechanism in TFET introduced by the mid-gap states of the vacancies in MoS2 is beneficial for enhancing the on-state current.
期刊介绍:
Materials Research Letters is a high impact, open access journal that focuses on the engineering and technology of materials, materials physics and chemistry, and novel and emergent materials. It supports the materials research community by publishing original and compelling research work. The journal provides fast communications on cutting-edge materials research findings, with a primary focus on advanced metallic materials and physical metallurgy. It also considers other materials such as intermetallics, ceramics, and nanocomposites. Materials Research Letters publishes papers with significant breakthroughs in materials science, including research on unprecedented mechanical and functional properties, mechanisms for processing and formation of novel microstructures (including nanostructures, heterostructures, and hierarchical structures), and the mechanisms, physics, and chemistry responsible for the observed mechanical and functional behaviors of advanced materials. The journal accepts original research articles, original letters, perspective pieces presenting provocative and visionary opinions and views, and brief overviews of critical issues.