Structural, optical and magnetic properties of dilute magnetic semiconductor of Zn1-xNixO thin films for spintronic devices

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2022-11-21 DOI:10.15251/jor.2022.186.739
M. Ahmed, A. Bakry, H. Dalir, E. R. Shaaban
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Abstract

Co-precipitation method is used to create various compositions of the bulk sample of Zn1- xNixO (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1). By using an electron beam approach, the required coatings were deposited onto extremely clean glass substrates. The current study examines the structural and optical, characteristics of Ni-doped ZnO thin films. The creation of the hexagonal wurtzite single phase of ZnO was revealed by X-ray diffraction, and it had a strong (002) peak with a peak shift towards a lower angle. It was discovered that the films' crystallite size shrank as the Ni content rose. Investigations were done into how Ni dopant affected the produced thin films' optical and magnetic properties. The optical energy gap decreases from 3.28 to 2.90eV with increasing Ni content. In addition, ferromagnetism increases with increasing Ni concentration at expense of Zn in Zn1-xNixO films . The changes in the optical and magnetic properties of the prepared films were discussed based on the structural modification, which, further, enhances upon Ni-doping
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用于自旋电子器件的Zn1-xNixO薄膜的稀磁半导体的结构、光学和磁性
采用共沉淀法制备了不同组成的Zn1- xNixO散装样品(x = 0、0.02、0.04、0.06、0.08和0.1)。通过使用电子束方法,所需的涂层被沉积在非常干净的玻璃基板上。本研究考察了ni掺杂ZnO薄膜的结构和光学特性。x射线衍射结果表明,ZnO的六方纤锌矿单相形成,具有较强的(002)峰,峰向低角度移动。结果表明,随着Ni含量的增加,薄膜的晶粒尺寸减小。研究了Ni掺杂剂对薄膜光学和磁性能的影响。随着Ni含量的增加,光能隙从3.28 ev减小到2.90eV。此外,Zn1-xNixO薄膜的铁磁性随Ni浓度的增加而增加,而Zn浓度的增加则增加。在结构修饰的基础上,讨论了制备薄膜的光学和磁性能的变化,并进一步增强了镍的掺杂
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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