Chalcogenide Phase-Change Material Germanium Telluride for Radio-Frequency Applications: An overview

Abstract

Chalcogenide phase-change materials (PCMs) have been widely used in optical storage media and nonvolatile memory devices applications. Over the past several years, there has been interest in exploiting PCM technology, especially germanium telluride (GeTe) and its alloys, for radio-frequency (RF) applications. The principle of operation of PCM-based RF devices is based on the ability of the material to transform from a high-resistivity (amorphous phase) to low-resistivity state (crystalline phase) and vice versa, with the application of a short, thermal pulse. Actuation pulses are applied to microheaters embedded with the PCM junction to switch between the two states. The PCM switch can exhibit more than five orders of resistance change between the two states. PCM-based RF switches are expected to bridge the gap between semiconductor switches and microelectromechanical systems (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. In addition to miniaturization, GeTe-based switches offer unique latching functionality and ease of monolithic integration with other RF circuits. This article presents an overview of PCM technology and its applications to RF circuits. A brief history of the technology is presented first, followed by a discussion of the basic characteristics of PCMs. The steps of a fabrication process of PCM RF devices are illustrated. A description of RF-PCM switch is presented in detail along with a comparison between RF performance of PCM switches and other existing commercial switches. As examples of application of the PCM technology to other RF circuits, the article concludes by presenting a crossbar switch matrix, phase shifter, and variable attenuator, realized using the PCM technology.