Improved Performance of Transparent MoS2 Thin-Film Transistor with IZO Electrodes by Air Thermal Annealing

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2023-08-23 DOI:10.1007/s13391-023-00450-3

Ju Won Kim, Jin Gi An, Guen Hyung Oh, Joo Hyung Park, TaeWan Kim

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Abstract

Molybdenum disulfide (MoS₂) grown via metal-organic chemical vapor deposition is known to exhibit high transparency and superior quality. Transparent thin-film transistor (TFT) based on a multilayer MoS₂ film and indium zinc oxide (IZO) using a representative transparent conducting oxide as source and drain electrodes indicate more than 70% transmittance in the visible wavelength. However, the device performance is limited by the large Schottky barrier height corresponding to the high work function of IZO (~ 5.1 eV) and surface impurities generated during the wet transfer process and subsequent oxidation. In this study, we addressed this problem by employing air thermal annealing to improve the TFT device performance. Consequently, contact resistance is reduced ~ 10 times, and the field-effect mobility and on/off ratio measured using ion-gel side gate, which are important parameters for TFT device operation, were enhanced by ~ 59 and ~ 81 times, respectively.

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空气热退火改善IZO电极透明MoS2薄膜晶体管的性能

众所周知，通过金属有机化学气相沉积生长的二硫化钼（MoS2）具有高透明度和卓越的品质。基于多层 MoS2 薄膜和氧化铟锌（IZO）的透明薄膜晶体管（TFT）使用具有代表性的透明导电氧化物作为源极和漏极，在可见光波段的透过率超过 70%。然而，由于 IZO 的功函数较高（约 5.1 eV），因此肖特基势垒高度较大，而且在湿法转移过程和随后的氧化过程中会产生表面杂质，从而限制了器件的性能。在本研究中，我们采用空气热退火来改善 TFT 器件的性能，从而解决了这一问题。因此，接触电阻降低了 ~ 10 倍，使用离子凝胶侧栅测量的场效应迁移率和开/关比（TFT 器件运行的重要参数）分别提高了 ~ 59 倍和 ~ 81 倍。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.